Development of silver sensitized germanium selenide photoresist by reactive sputter etching in SF6

Abstract

Silver sensitized germanium selenide/polymer bilevel resist system has been used to pattern structures in SiO2 on silicon. Using reactive sputter etching in an SF6 plasma for developing germanium selenide gives superior results compared to CF4 or CHF3 in terms of sensitivity; 500:1, contrast; 7, and sensitivity; 50 mJ/cm2 at 436 nm. By this method 1-μ lines and spaces and 1-μ contact holes have been defined in germanium selenide. These have been transferred into polymer and SiO2 using standard reactive sputter etching with O2 and CHF3, respectively.

Physical properties of aGeS2glass using approximateab initiomolecular dynamics

“…Chalcogenide materials can be used as sensitive media for optical recording, as light guides, as high-resolution inorganic photoresistors or anti reflection coatings [4]. Moreover bulk glasses with for example Ag + cations are good solid electrolytes with a high ionic conductivity at room temperature [5] and thin GeS 2 films are promising materials for submicron lithography when doped with silver [6]. The high quantum efficiency of these glasses appears as a consequence of the relative high masses of the elements involved [7].…”

Electronic structure of amorphous germanium disulfide via density-functional molecular dynamics simulations

“…For example, amorphous GeS 2 systems present promising applications as high efficiency optical amplifiers in optical communications networks, memory or switching devices [1,2], high-resolution inorganic photoresistors, or anti-reflection coatings [3]. Moreover, thin films doped with silver are promising materials for submicrometer lithography [4,5], and bulk glasses with Ag + cations are good solid electrolytes with a high ionic conductivity at room temperature [6,7]. Therefore, the structural and electronic properties of g-GeS 2 have been extensively studied for many years through experimental measurements [8,9], and recently ab initio cluster calculations of crystalline GeS 2 have been performed on this topic [10].…”

Waveguides based on Te2As3Se5 thick films for spatial interferometry

“…The resin was first annealed 15 min at 85°C, then insolated through a metallic mask thanks to a mercury vapor lamp (S.E.T MG 1400), 250 W. The insolated bands of 15 lm in width were dissolved by dipping the resin in a MF319 commercial remover. Physical [9,10] and reactive physical [11][12][13] etchings were performed on the films. An ALCATEL-DION 300 RF-sputtering set-up was used for physical etching in an argon atmosphere (5 Pa Ar).…”