Development of SnS0.4Se0.6 Ternary Alloy on Annealing of Thermally Deposited Films

Banotra, Arun; Padha, Naresh

doi:10.1007/s11664-018-6710-y

Cited by 12 publications

(4 citation statements)

References 30 publications

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“…It was noticed that the lattice parameters varied with increase of substrate temperature. A similar type of variation in lattice parameters in thermally evaporated SnS 0.4 Se 0.6 films was reported by Banotra et al [31].…”

Section: Structural Propertiessupporting

confidence: 85%

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Substrate temperature dependent physical properties of SnS1−xSex thin films

et al. 2019

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Recently, researchers showed great interest on SnS 1−x Se x alloy films because of their tunable physical properties that are suitable as an absorber layer in thin film solar cells. In the present work, SnS 1−x Se x thin films were deposited by thermal co-evaporation of SnS and Se at different substrate temperatures ranging from 200 to 350 °C. The influence of substrate temperature (T s ) on composition, structure, surface morphology, topography and optical properties of as-deposited films was investigated using appropriate techniques and the results are reported in detail. The EDS analysis of SnS 1−x Se x films showed that Sn/(S + Se) ratio was changed from 0.84 to 1.16 with increase of substrate temperature. All the films were polycrystalline in nature, exhibiting (111) plane as preferred orientation with orthorhombic crystal structure. From W-H analysis, the crystallite size and lattice strain in the films were evaluated, where the crystallite size varied in the range, 9-22 nm with substrate temperature. The layers showed a change in the shape of grains with the rise of substrate temperature, where the grain size has increased with T s . The topographical results indicated an indirect relation between surface roughness and average grain size with change in substrate temperature. The band gap energy values of the films was decreased with increase of T s and varied in the range, 1.59-1.46 eV. In addition, the photoconductivity measurements revealed that the as-deposited SnS 1−x Se x films had bimolecular type recombination (γ ~ 0.5) of photo-generated charge carriers.

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Section: Structural Propertiessupporting

confidence: 85%

“…This might be due to either dissociation of part of the ternary phase into stable binary SnS phase by re-evaporating Se or desorption of Se atoms at such higher temperatures. Such presence of secondary phases were also observed by Banotra et al for SnS 0.4 Se 0.6 alloy films annealed at higher temperatures [31].…”

Section: Eds Analysissupporting

confidence: 81%

Substrate temperature dependent physical properties of SnS1−xSex thin films

et al. 2019

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“…Thus, it is intriguing to explore the potential of mixed-phase ternary SnS x Se 1– x thin films for use as absorber layers in solar cell applications. In the past, several deposition processes, namely, thermal evaporation, , electrodeposition, , and chemical bath deposition (CBD), , have been used to prepare mixed-phase SnS x Se 1– x thin films. Nevertheless, the resulting morphological features were found to be plate-, sheet-, or flake-like in most cases, which are unsuitable for fabricating PV devices.…”

Section: Introductionmentioning

confidence: 99%

One-Step Vapor Transport Deposition for Tuning the Photovoltaic Performance of SnS_xSe_1–x Solar Cells: Analysis of the Improved V_oc and J_sc

Nandi

Pawar

Yadav

et al. 2022

ACS Appl. Energy Mater.

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Binary tin chalcogenides (SnS and SnSe) are investigated extensively for thin-film solar cells (TFSCs). The conventional sulfo-selenization of elemental Sn follows multiple and rigorous procedures. Herein, we have developed a one-step procedure for developing a mixed-phase SnS x Se 1−x thin film. Meanwhile, reports on synthesizing mixed-phase SnS x Se 1−x (0 < x < 1) thin films for TFSCs are scarce. In this study, SnS x Se 1−x thin films are synthesized by vapor transport deposition using a mixture of SnS and SnSe source powders for evaporation. Energy-dispersive X-ray spectroscopy analysis confirmed the formation of homogeneous and uniformly distributed ternary SnS x Se 1−x alloys. The corresponding X-ray diffraction patterns revealed that the 2θ values of the characteristic (111) peak of the orthorhombic structure shifted toward a lower angle as the Se-content increased owing to the expansion of the lattice constant. The S-rich SnS x Se 1−x devices exhibited a superior V oc , while the Se-rich devices displayed a superior J sc . The highest efficiency of 3.75% was achieved for the optimized SnS 0.70 Se 0.30 absorber layer, which is significantly higher than those of pure SnS or SnSe devices.

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“…Upto now, very limited work has been carried out on the synthesis and characterization of SnSSe in different forms such as single crystals [12], nanocrystals [13], nanosheets [14] and thin films [15]. SnSSe thin films have been deposited by chemical and physical techniques mainly using electrodeposition [16], screen printing [17], thermal evaporation [18] and chemical bath deposition [19]. Although, few groups have investigated on SnSSe thin films followed by characterization, however, the reported data is very meagre and needs thorough and detailed investigation of different physical properties in relation to growth conditions.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of thermally co-evaporated SnS_1−xSe_x alloy films

Saritha¹,

Rasool²,

Reddy³

et al. 2019

Mater. Res. Express

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The paper presents studies of optical and electrical properties of SnS 1−x Se x (x=0.26-0.31) thin films deposited on glass substrates using thermal co-evaporation technique at different substrate temperatures, 200 °C-350 °C. The as-deposited films were characterized by the energy dispersive spectroscopy, X-ray diffractometry, scanning electron microscopy, optical transmission and reflection spectroscopy, four-probe resistivity and photoconductance measurements. The results have shown that deposited films can be used as absorber layers in thin film solar cell applications, and the optimal substrate temperature for the deposition is 300 °C.

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Development of SnS0.4Se0.6 Ternary Alloy on Annealing of Thermally Deposited Films

Cited by 12 publications

References 30 publications

Substrate temperature dependent physical properties of SnS1−xSex thin films

Substrate temperature dependent physical properties of SnS1−xSex thin films

One-Step Vapor Transport Deposition for Tuning the Photovoltaic Performance of SnS_xSe_1–x Solar Cells: Analysis of the Improved V_oc and J_sc

Optical and electrical properties of thermally co-evaporated SnS_1−xSe_x alloy films

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Development of SnS0.4Se0.6 Ternary Alloy on Annealing of Thermally Deposited Films

Cited by 12 publications

References 30 publications

Substrate temperature dependent physical properties of SnS1−xSex thin films

Substrate temperature dependent physical properties of SnS1−xSex thin films

One-Step Vapor Transport Deposition for Tuning the Photovoltaic Performance of SnSxSe1–x Solar Cells: Analysis of the Improved Voc and Jsc

Optical and electrical properties of thermally co-evaporated SnS1−xSex alloy films

Contact Info

Product

Resources

About

One-Step Vapor Transport Deposition for Tuning the Photovoltaic Performance of SnS_xSe_1–x Solar Cells: Analysis of the Improved V_oc and J_sc

Optical and electrical properties of thermally co-evaporated SnS_1−xSe_x alloy films