Development of SOI pixel process technology

Arai, Y.; Miyoshi, T.; Unno, Y.; Tsuboyama, T.; Terada, S.; Ikegami, Y.; Ichimiya, R.; Kohriki, T.; Tauchi, K.; Ikemoto, Y.; Fujita, Y.; Uchida, Tomohisa; Hara, K.; Miyake, H.; Kochiyama, M.; Sega, T.; Hanagaki, K.; Hirose, Masahiro; Uchida, J.; Onuki, Y.; Horii, Yoshimasa; Yamamoto, H.; Tsuru, Takeshi Go; Matsumoto, Hironori; Ryu, Syukyo G.; Takashima, R.; Takeda, Ayaki; Ikeda, Hitoshi; Kobayashi, Daisuke; Wada, Takehiko; Nagata, Hajime; Hatsui, Takaki; Kudo, Togo; Taketani, A.; Kameshima, Takashi; Hirono, T.; Yabashi, Makina; Furukawa, Yukito; Battaglia, M.; Denes, P.; Vu, C.; Contarato, Devis; Giubilato, P.; Kim, T.S.; Ohno, Morifumi; Fukuda, Kohei; Kurachi, Ikuo; Okihara, Masao; Kuriyama, Naoya; Motoyoshi, Mizuki

doi:10.1016/j.nima.2010.04.081

Cited by 159 publications

(77 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The same detection method employing LEKID resonators was conducted by Moore et al [5], who obtained the energy resolution of 550 eV at 30 keV after the position correction with the resolution of ≤ 1 mm. The higher position resolution may improve the energy resolution and be achieved using a SOI pixel sensor able to function at low temperature less than 1 K. We propose the combination of SOI pixel sensor [10] and LEKID. The SOI pixel detector senses the ionization signal and identifies the position with a 0.1 mm precision, while LEKID formed in the backside of the substrate detects athermal phonons to measure the total energy.…”

Section: Possible Applicationsmentioning

confidence: 99%

Development of Lumped Element Kinetic Inductance Detectors for phonon and photon detections

Kibayashi

Ishino

Yamada

et al. 2015

2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Proceedings

View full text Add to dashboard Cite

We present recent developments of our phonon and photon detections using Lumped Element Kinetic Inductance Detectors (LEKIDs). Photons or phonons incident on superconducting material break Copper-pairs and change its kinetic inductance. If the superconductor is in a form of a resonator, the resonant frequency shifts depending on the deposited energy of the incident phonon or photon. We have been developing arrays of such detectors with different frequencies, and multiplex readouts in the frequency domain. We have optimized positions of resonators minimizing cross-talks between the neighboring resonators using simulation, and were able to detect phonons created in the substrate by irradiating particles. We have also successfully counted photons incident on LEKIDs by a laser. We discuss possible future applications using LEKIDs. as well.

show abstract

Section: Possible Applicationsmentioning

confidence: 99%

Development of Lumped Element Kinetic Inductance Detectors for phonon and photon detections

Kibayashi

Ishino

Yamada

et al. 2015

2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Proceedings

View full text Add to dashboard Cite

show abstract

“…One impressive development [22] demonstrated good performance in a particle beam [23]. Further work is planned to improve the radiation tolerance, lower due to accumulation of radiation induced charge in the buried oxide.…”

Section: Silicon On Insulator or Soimentioning

confidence: 99%

CMOS monolithic active pixel sensors for high energy physics

Snoeys¹

2014

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

a b s t r a c tMonolithic pixel detectors integrating sensor matrix and readout in one piece of silicon are only now starting to make their way into high energy physics. Two major requirements are radiation tolerance and low power consumption. For the most extreme radiation levels, signal charge has to be collected by drift from a depletion layer onto a designated collection electrode without losing the signal charge elsewhere in the in-pixel circuit. Low power consumption requires an optimization of Q/C, the ratio of the collected signal charge over the input capacitance [1]. Some solutions to combine sufficient Q/C and collection by drift require exotic fabrication steps. More conventional solutions up to now require a simple in-pixel readout circuit. Both high voltage CMOS technologies and Monolithic Active Pixel Sensors (MAPS) technologies with high resistivity epitaxial layers offer high voltage diodes. The choice between the two is not fundamental but more a question of how much depletion can be reached and also of availability and cost. This paper tries to give an overview.

show abstract

“…Therefore, the potential of silicon substrate affects the threshold voltage and leakage current of the transistors [15]. Buried P-Well (BPW) technology has been proposed by KEK [16,17] to suppress the back-gate effect. In addition, BPW has an impact on the pixel characteristics because it affects the carrier collection process.…”

Section: Introductionmentioning

confidence: 99%

Design and optimization of collection efficiency and conversion gain of buried p-well SOI pixel X-ray detector

et al. 2017

View full text Add to dashboard Cite

Buried P-Well (BPW) technology was used in silicon-on-insulator pixels (SOIPIX) to suppress the back-gate effect, the major challenge in SOIPIX. In this work, we have designed and optimized two novel pixel structures, which are based on different BPW design layouts, to study the carrier collection efficiency and conversion gain of the pixel unit used in SOIPIX X-ray detectors. The first structure has an extended BPW region connected with a P+ node. In the second structure, a separated BPW ring region is formed surrounding the P+ node. Two X-ray sources with different photon energies have been applied in the simulation of excess carrier generation. The results indicated that the first structure had higher collection efficiency while the second structure had a slightly better conversion gain. As a result, the total photoelectric voltage of the first structure is about two times that of the second structure, where low doping concentration (<1 × 10 16 cm -3 ) in the BPW region is preferred. Such a study of design and optimization of BPW technology is very important for applications in SOIPIX detectors.

show abstract

Development of SOI pixel process technology

Cited by 159 publications

References 6 publications

Development of Lumped Element Kinetic Inductance Detectors for phonon and photon detections

Development of Lumped Element Kinetic Inductance Detectors for phonon and photon detections

CMOS monolithic active pixel sensors for high energy physics

Design and optimization of collection efficiency and conversion gain of buried p-well SOI pixel X-ray detector

Contact Info

Product

Resources

About