Development of Technological Principles for Creating a System of Microfocus X-Ray Tubes Based on Silicon Field Emission Nanocathodes

Djuzhev, N. A.; Demin, G. D.; Filippov, Nikolay A.; Evsikov, Ilya D.; Glagolev, Petr Yu.; Makhiboroda, M. A.; Чхало, Н. И.; Салащенко, Н. Н.; Filippov, Sergey V.; Kolosko, Anatoly G.; Popov, E. O.; Беспалов, В. А.

doi:10.1134/s1063784219120053

Cited by 15 publications

(6 citation statements)

References 14 publications

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“…The main element of lithography based on a synchrotron storage ring is a source of coherent synchrotron radiation (undulator), which generates this radiation by creating a periodic magnetic field in a system of permanent magnets and then directs it to the mask [22][23][24]. As shown in Fig.…”

Section: Diffraction Theory Of Image Formation In Projection X-ray Op...mentioning

confidence: 99%

Refractive X-ray optics: towards wavelengths of 13.5 nm and beyond

Demin,

Korneev,

Glagolev

et al. 2023

Preprint

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In this work we analyze the possibility of using refractive lenses for X-ray lithography in the wavelength range λ=2-20 nm, where the absorption of radiation in the lens material has a significant impact on the image quality. The general scheme of image formation in projection refractive X-ray optics using a composite objective lens consisting of biconcave elementary lenses is considered. By means of the analytical solution and finite-element simulation model, possible ways to obtain the lens transmission function taking into account the absorption of X-rays were investigated. A lens based on a beryllium (Be) thin film with a complex refractive index n=0.989+0.0015i was chosen to estimate its optical properties at a wavelength of 13.5 nm. Two mechanisms of blurring of the X-ray beam at the lens focus were studied: a mechanism associated with X-ray diffraction and a mechanism based on the absorption of X-ray radiation in the lens material. The possibility of reducing X-ray absorption by switching to diffractive and kinoform lenses is being explored. A method for constructing an image in a diffraction lens with a 4-fold reduction taking into account X-ray absorption is presented. It was shown that to obtain image resolution in the range of 20-40 nm, composite kinoform lenses consisting of a small number (N=3-6) of elementary lenses can be used.

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Section: Diffraction Theory Of Image Formation In Projection X-ray Op...mentioning

confidence: 99%

Refractive X-ray optics: towards wavelengths of 13.5 nm and beyond

Demin,

Korneev,

Glagolev

et al. 2023

Preprint

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“…В качестве исследуемого образца был взят фрагмент кремниевой пластины n-типа проводимости с имеющимся на нем массивом полевых катодов острийного типа, который был изначально изготовлен для выполнения задач рентгеновской литографии. Каждый из катодов в массиве обеспечивает фиксированную величину автоэмиссионного тока, необходимую для генерации рентгеновского излучения в заданной области анодного электрода с прострельной мишенью, ответственной за создание единичного пикселя изображения на рентгенорезисте [13]. Для успешного формирования топологического рисунка крайне важно иметь однородность распределения автоэмиссионного тока по мишени, что, в свою очередь, требует высокой однородности размера катодов внутри массива.…”

Section: методика экспериментаunclassified

“…В работе [17] были показаны исключительные преимущества традиционной кремниевой технологии для создания воспроизводимых автоэмиссионных структурразброс размеров катодов внутри массива оказывается минимальным, а значения плотности тока могут превышать 100 A/cm 2 при напряжении менее 75 V. Достаточно высокая воспроизводимость технологического процесса создания массива кремниевых катодов острийного типа позволяет формировать структуры, обладающие строгой периодичностью, что особенно важно для реализации устройств, требующих генерации направленных электронных пучков высокой плотности -в частности, системы микрофокусных рентгеновских источников. Технологический процесс создания массива кремниевых катодов острийного типа для указанного применения был описан нами ранее в [13,17]. Предварительное исследование образцов методикой РЭМ (растровой электронной микроскопии) позволило сделать вывод о том, что полученные катоды обладают наноразмерным (порядка 10 nm) радиусом скругления вершины и высотой около 350 nm.…”

Section: методика экспериментаunclassified

Анализ Эмиссии Электронов С Одиночного Кремниевого Катода В Квазивакуумную (Воздушную) Среду Методом Атомно-Силовой Микроскопии

Евсиков¹,

Митько²,

Глаголев³

et al. 2020

Журнал Технической Физики

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Using atomic force microscopy (AFM), we experimentally examined the features of field-electron emission from a single point-type silicon cathode into a quasi-vacuum (air) medium. In the non-contact AFM operating mode, the current – voltage characteristics (CVCs) of a single cathode with a nanometer radius of curvature of the tip were measured at distances of 10 nm and 20 nm between the cathode tip and the top of the measuring probe. The electric field distribution was simulated both on the surface of the tip of a single cathode and on the surface of the tips of individual cathodes within the array, based on which a theoretical estimate of the field enhancement factor as a function of the cathode-probe distance was made. The field-enhancement factor calculated from the experimental CVCs in the Fowler-Nordheim coordinates is several orders of magnitude higher than its value obtained from theoretical calculations. Such a mismatch between the experimental data and the simulation results indicates the need to take into account additional quantum-size effects, which play an important role in the formation of the field-electron emission current in the nanoscale gap. In particular, deformation of the silicon emitter tip can occur at this scale due to the penetration of a strong electric field into its surface region, which, in turn, causes the distortion of the potential barrier at the interface with the quasi-vacuum medium.

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“…Infrared detectors are of great importance in many fields including military applications, − medical imaging, − and object identification , via thermal detection and imaging, and more and more photosensitive materials, such as Si, − ,− GaAs, − CdZnTe, − and graphite, ,,,, are being explored to gain high-responsivity detection. Among them, Si exhibits excellent absorption and photoelectric performances associated with its low cost and wide use in multifunctional applications, which make it largely employed in the fields of photodetectors, − photodiodes, − and field emission devices. − However, Si displays certain limitations for infrared detection: it suffers a sharp absorption drop for incident light wavelengths longer than 1.1 μm due to its band gap and a high surface reflection, especially in visible range. Hence, the development of a Si-based infrared detector with ideal performances requires strategies aiming at both reducing its surface reflection in the visible and infrared spectral ranges and redshifting the absorption beyond its band gap. , …”

Section: Introductionmentioning

confidence: 99%

Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water

Wang,

Du,

JJ Nivas

et al. 2024

ACS Appl. Mater. Interfaces

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Tellurium (Te)-doped black silicon (Si) with enhanced absorption and photoelectric performance over a broad wavelength range of 0.2−2.5 μm was obtained using femtosecond (fs) laser irradiation in liquid water. Prior to laser irradiation, the Si sample was covered with a Te thin film (thickness 200 nm) over an adhesion layer of Cr (thickness 5 nm). Surface analyses by scanning electron microscopy and three-dimensional confocal microscopy evidence the presence of hierarchical surface structures combining quasi-periodic stripes with a spatial period of about 5 μm and subwavelength laser-induced periodic surface structures directed in directions parallel and perpendicular to the direction of the laser polarization, respectively. Moreover, the incorporation of Te generates intermediate levels within the Si bandgap. The Te-doped black Si shows a significant enhancement of the absorption, which reaches values of about 48% in the UV and visible (0.2−1.1 μm) and 70% in the near-infrared (1.1−2.5 μm) spectral ranges, respectively, due to the synergistic effects of multiscale surface structures and Te incorporation. Moreover, the surface reflectance is reduced to almost zero across the entire spectrum. The Te-doped black Si sample is used to realize a photodetector which displays an impressive photoelectric capability, being characterized by a responsivity of 328 mA/W, and an external quantum efficiency of 49.27% at a voltage bias of −10 V for 1064 nm light illumination, with rising and falling times of 55 and 67 ms, respectively. These figures remarkably outperform the response of unprocessed Si under the same experimental conditions.

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Development of Technological Principles for Creating a System of Microfocus X-Ray Tubes Based on Silicon Field Emission Nanocathodes

Cited by 15 publications

References 14 publications

Refractive X-ray optics: towards wavelengths of 13.5 nm and beyond

Refractive X-ray optics: towards wavelengths of 13.5 nm and beyond

Анализ Эмиссии Электронов С Одиночного Кремниевого Катода В Квазивакуумную (Воздушную) Среду Методом Атомно-Силовой Микроскопии

Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water

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