2007
DOI: 10.1021/cr068027+
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Development of the Chemistry of Indium in Formal Oxidation States Lower than +3

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Cited by 129 publications
(143 citation statements)
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“…We note that though the monovalent In + ions are less common than the trivalent In 3+ ions in materials, the In + -contained compounds do exist substantially. [79][80][81] In fact, InCl is a directly available precursor for synthesizing the above two compounds. To probe whether the oxidation of In + into In 3+ can cause material instability, we consider the possible decompositions of Cs 2 InSbCl 6 and Cs 2 InBiCl 6 into their corresponding In 3+ -contained compounds ( Figure S4 of Supporting Information).…”
Section: Combinatory Materials Screening Of Potentially Highphotovoltmentioning
confidence: 99%
“…We note that though the monovalent In + ions are less common than the trivalent In 3+ ions in materials, the In + -contained compounds do exist substantially. [79][80][81] In fact, InCl is a directly available precursor for synthesizing the above two compounds. To probe whether the oxidation of In + into In 3+ can cause material instability, we consider the possible decompositions of Cs 2 InSbCl 6 and Cs 2 InBiCl 6 into their corresponding In 3+ -contained compounds ( Figure S4 of Supporting Information).…”
Section: Combinatory Materials Screening Of Potentially Highphotovoltmentioning
confidence: 99%
“…The chemistry of indium in oxidation states <III has been rapidly developing in the last twenty years [220] (Fig. 35), and Table 9 contains details of those structurally characterised.…”
Section: Indiummentioning
confidence: 99%
“…The crystal structures of these compounds show that gallium(I) is in a bent sandwich environment involving two h 6 -coordinated arenes, similar to Schmidbaurs [(ArH) 2 Ga]- [MX 4 ] (ArH = benzene, toluene, mesitylene). [10] The main difference is the absence of the strong cation···anion interactions in the former compounds that are so common in the latter examples (Scheme 2).…”
Section: Ga]mentioning
confidence: 87%
“…[9] Metallic gallium is oxidized by Ag[Al{OC(CF 3 ) 3 } 4 ] in toluene or fluorobenzenes using sonication as the energy source (Scheme 1). The resulting solutions containing the [(ArH) 2 …”
mentioning
confidence: 99%