2021
DOI: 10.1134/s1063776121070037
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Development of the Design of Super-Multiperiod Structures Grown by Molecular-Beam Epitaxy and Emitting in the Terahertz Range

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Cited by 5 publications
(5 citation statements)
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“…The geometry of these SLs was inspired by the structures proposed in Ref. [8] and underwent a few modifications for output characteristics improvement, including estimated gain [9] . When the electric field is applied to such SLs, light amplification becomes possible due to the emergence of optical intersubband transitions.…”
Section: Resultsmentioning
confidence: 99%
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“…The geometry of these SLs was inspired by the structures proposed in Ref. [8] and underwent a few modifications for output characteristics improvement, including estimated gain [9] . When the electric field is applied to such SLs, light amplification becomes possible due to the emergence of optical intersubband transitions.…”
Section: Resultsmentioning
confidence: 99%
“…All of the mentioned methods allow to simulate SLs with a large number of periods (here, SMP SLs). However, there are few works only [8,11] that include the experimental study of such SLs combined with theoretical and numerical analysis. Some of these methods even assume that the SL under consideration is infinite [33−36, 46−52] .…”
Section: N Ementioning
confidence: 99%
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“…It is obvious, that for both quantum cascade lasers and tunable terahertz sources based on AlGaAs/GaAs superlattices with strongly and weakly coupled quantum wells, the carrier concentration and doping level is especially important, since these parameters determine gain and population inversion [4][5][6]. It was shown theoretically that for the developed terahertz source configuration there is an optimal value of the electron concentration at which generation in the terahertz region is most effective [7]. Alongside this, the distribution of electrons over the superlattice must be homogeneous to fulfill the tunneling transparency condition.…”
Section: Introductionmentioning
confidence: 99%
“…This paper is concerned with the applicability of the C-V profiling method described above for determining the carrier distribution in AlGaAs/GaAs superlattices with a different number of periods. A design solution for the layer composition and parameters of superlattice heterostructures is based on the optimal configuration proposed for terahertz radiation sources [7]. The apparent carrier concentrations obtained by C-V profiling are proven through comparison with the true concentration profiles in these structures.…”
Section: Introductionmentioning
confidence: 99%