Development of the dislocation arrangement in Fe-0·9 wt% Si single crystals deformed in tension

Libovický, S.; Šesták, B.

doi:10.1080/01418618308243108

Cited by 20 publications

(2 citation statements)

References 14 publications

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“…At higher levels of strain, i.e. Such a process is compatible with the pattern observed in other deformation conditions : while the mosaic like structure is due to the equi-activity on the two slip systems in a double slip orientation, elongated cells are expected when one slip system dominates like in stage II for single crystal (2) or in grains of polycrystals (8). The progressive opening of cell interiors within the highly concentrated dislocations structure (Fig.…”

Section: Monotonous Deformationsupporting

confidence: 82%

“…For instance, single slip promoted during cyclic or monotonous deformations gives rise to dipole walls which orientation is perpendicular or at least very inclined with respect to the active slip plane (1)(2)(3). At a temperature below half the melting point, more or less well defined cell structures are frequently observed in face-centred cubic as well as in body-centred cubic materials.…”

Section: Introductionmentioning

confidence: 99%

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Formation and Evolution of Dislocation Structures in Fe-3%Si Single Crystals Under Monotonous and Sequential Loading

Rauch¹

1992

Journal of the Mechanical Behavior of Materials

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Tensile tests are performed on Fe-3%Si single crystals in a multiple slip orientation, namely the [110] axis, to promote the development of a cell structure. At low strains (ε<15%) , the resulting dislocation arrangement is composed of tangles distributed at random. This pattern evolves toward two families of dislocation sheets which constitute a mosaic like structure at higher levels of deformation. The sheets are composed of elementary tangles aligned in directions which are approximatively parallel to the trace of the active slip planes. When the deformed samples are further sheared at 90° from the tensile axis, the observed pattern is homogeneous only at low prestrains. For tensile deformations higher than 25%, microbands are formed and appear superimposed to the prestrain cell structure. The flow localization related to microband formation results from the destabilisation of the dislocation arrangement pertaining to the tensile deformation.

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Section: Monotonous Deformationsupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Formation and Evolution of Dislocation Structures in Fe-3%Si Single Crystals Under Monotonous and Sequential Loading

Rauch¹

1992

Journal of the Mechanical Behavior of Materials

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Plasticity of high purity iron single crystals (I) 1. work hardening

Novák

Kadečková

Šesták

et al. 1984

Cryst. Res. Technol.

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Work HardeningDedicated to Professor V. I. STARTSEV on the occasion of his 70th birthday High purity iron single crystals were deformed in tension in the temperature range 4.2 to 473 K. Work-hardening characteristics were determined and the plastic behaviour in dependence on temperature, strain rate and crystal orientation is discussed. The transition temperature between low-temperature and intermediate-temperature deformation regimes was found to be 250 K, the critical temperature estimated from the temperature dependence of the critical resolved shear stress is 380 K. A hump on the temperature dependence of the critical resolved shear stress was observed in the vicinity of 250 K. These observations are qualitatively explained by special mobilities of dislocations in b.c.c. lattice.Hochreine Eisen-Einkristalle wurden im Temperaturbereich 4,2 bis 473 K zugverformt. Die Verfestigungscharakteristika wurden bestimmt, und das plastische Verhalten in Abhangigkeit von Temperatur, Verformungsrate und Kristallorientierung wird diskutiert. Die obergangstemperatur zwischen Tieftemperatur-und Zwischentemperaturregime wurde zu etwa 250 K gefunden; die kritische Temperatur, abgeschatzt aus der Temperaturabhangigkeit der kritischen bezogenen Schubspannung, betragt ca. 380 K. Ein Ruckel in der Temperaturabhangigkeit der kritischen bezogenen Schubspannung wurde in der Umgebung von 250 K beobachtet. Dies ist durch spezielle Beweglichkeiten der Versetzungen im krz-Gitter erkliirbar.

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