Development of the first prototypes of Silicon PhotoMultiplier (SiPM) at ITC-irst

Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

“…Silicon Photo-Multiplers [1,2] are constituted of a large number of micropixels each made of an APD counter in series with a quenching resistance and they operate in Geiger mode. Their sensitivity to a small number of photoelectrons and their fast response make them candidate light detectors also for the extruded scintillators of the Instrumented Flux Return (IFR) of the super flavor factory experiment proposed at "Laboratori Nazionali di Frascati" (SuperB [3]).…”

Thermal and electrical characterization of silicon photomultiplier

“…Each micro-cell (40 40 m ) is composed by a shallow -p junction in series with a poly-silicon quenching resistance [2], [3] ( Fig. 1) whose value was estimated to be approximately 300 k [4]. All micro-cells are connected in parallel through the aluminium layer on top of the photo-sensitive side.…”

Silicon Photo Multipliers Detectors Operating in Geiger Regime: an Unlimited Device for Future Applications

“…After about one century of standard technology (photocathode and dynode electron multiplication chain), the recent strong developments of modern silicon devices have the potential to boost this technology towards a new generation of photodetectors, based on an innovative and simple inverse p-n junction, PN or PIN photodiodes, avalanche photodiodes-APD and avalanche photodiodes in linear Geigermode (GM-APD, SiPM from now on) [18][19][20][21][22][23][24][25]. These solid-state devices present important advantages over the vacuum ones, namely higher quantum efficiency, lower operation voltages, insensitivity to the magnetic fields, robustness and compactness.…”

“…Than the gain of the SiPM (G) is determined by the charge (Q) that can be released from a micro-cell after the breakdown [19]:…”