Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots

Abstract

We report the hybrid p-n junction based on GaN quantum dots (QDs) as an electron transport layer and poly(3-hexylthiophene-2,5-diyl) (P3HT) as a hole transport layer, which has not been tried for the solar cell until now. The growth of GaN QDs was achieved by the hydride vapor phase epitaxy (HVPE) technique and P3HT film sequentially was coated on the top of QDs. The overall performance of P3HT/GaN QDs hybrid heterojunction was analyzed by current density-voltage (J-V ) characteristics and finally exhibited an open-circuit voltage, short-circuit current density, and fill factor of 160 mV, 3.6 mA/cm 2 , and 0.25, respectively. Also, its efficiency was shown up to 0.14% in an active area of 0.04 cm 2 under AM1.5G illumination with an intensity of 100 mW cm À2 . In this paper, we discuss the factors which affect the power conversion efficiency for future works. #

GaN meets organic: technologies and devices based on gallium-nitride/organic hybrid structures

“…The open circuit voltages range from 0.64 to 0.73 V and appears to be independent from the specific organic component used. An exception is the low value reported for GaN nanocrystals deposited into a P3HT matrix described by Kim and co-workers [115]. For this device, even an efficiency is mentioned with 0.14%.…”

“…Organic-inorganic heterojunctions are solar cells based on n-type GaN substrates have been a field of intense research in the past decade. Hybrid GaN-based devices with photovoltaic characteristics reported in the literature employed PANI [78,114], P3HT [83,115], CuPc [33] and PEDOT:PSS [81,84] as the organic component. Lozac'h and co-workers [81] focused on PEDOT:PSS/n-GaN structures.…”

Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application

“…The BHJ/ 200 nm GaN NWs/n-Si structure demonstrated V oc = 0.5 V, J sc = 1.48 mA.cm −2 , and FF = 39%. Addition of Kim et al (2013) for P3HT/GaN quantum dots hybrid heterojunction show: V oc = 0.16 V, J sc = 3.6 mA.cm −2 , and FF = 25%, respectively. Improvement in structures performance is probably caused by better charge separation and collection conditions in the presence of nanowires.…”

“…Despite large amount of works discussing ways of improving thiophene-based solar cells, there are little reports on P3HT/GaN system. This field was established by works exploring electrical behavior of P3HT/GaN interfaces (Park et al 2009;Kumar et al 2013), and others report organic structures with GaN nanoparticles synthesized by sol-gel method (Feng et al 2013) and hybrid vapor phase epitaxy grown GaN quantum dots (Kim et al 2013). A more recent paper by Noh et al (2017) discusses photovoltaic performance of P3HT layers deposited on planar GaN.…”