Development of the large field extreme ultraviolet lithography camera

Watanabe, Takeo; Kinoshita, Hiroo; Nii, Hajime; Li, Y.; Hamamoto, Kazuhiro; Oshino, Tetsuya; Sugisaki, K.; Murakami, Katsuhiko; Irie, Shigeo; Shirayone, Shigeru; Gomei, Yoshio; Okazaki, Shinji

doi:10.1116/1.1319712

Cited by 14 publications

(10 citation statements)

References 13 publications

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“…Thus far, we have evaluated the lithographic performance of various types of resist [4][5][6][7][8][9][10] such as chemically amplified (CA) resist 2) and non-chemically amplified resist. 3) A sensitivity of 2 mJ/cm 2 and a resolution of 40 nm linewidth have been achieved.…”

Section: Introductionmentioning

confidence: 99%

Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU

Watanabe

Kinoshita

Sakaya

et al. 2005

Jpn. J. Appl. Phys.

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This paper presents a touch probe system with improved sensitivity and repeatability. In this probe, a tip ball is attached to the probe stylus through elastic bodies that enable the ball to be displaced in three directions. When the tip ball touches the workpiece, three fibre optic lever displacement sensors measure directly the ball's displacement and direction. Because the ball is located in sensitive directions of all of the sensors, this probe complies with Abbe's principle, which is a basis of precision measurement. Various performance tests have been performed using one-dimensional stages. The measurement resolution of the tip ball displacement was less than 12 nm in these experiments. Thus, the probe triggering level was set safely to 50 nm, taking into account the associated noise levels. The variation of the pretravel was less than 25 nm in all directions. The measurement force was approximately 0.6 mN in the horizontal direction and 4.5 mN in the vertical direction.

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Section: Introductionmentioning

confidence: 99%

Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU

Watanabe

Kinoshita

Sakaya

et al. 2005

Jpn. J. Appl. Phys.

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“…So far, we have evaluated the lithographic performance of various kinds of resists [6][7][8][9][10][11] such as both chemically amplified (CA) resist [2][3][4] and non-chemically amplified resist. 5) A sensitivity of 2 mJ/cm 2 and a resolution of 40 nm line width have already been achieved.…”

Section: Introductionmentioning

confidence: 99%

Development of Fast-Photospeed Chemically Amplified Resist in Extreme Ultraviolet Lithography

Watanabe

Hada

Lee

et al. 2005

Jpn. J. Appl. Phys.

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In a high-annealing type resist system that employs polyhyodroxy styrene as a base resin, we found that tri-phenysulfonium cyclo(1,3-perfluoropropanedisulfone) imidate when employed as a photoacid generator (PAG) is more sensitive than tri-phenysulfonium nonaflate under extreme ultraviolet (EUV) exposure. However, their sensitivities are almost the same under KrF and EB exposures. As results of both outgassing species and FT-IR measurements, the EUV-induced reaction of cyclo(1,3-perfluoropropanedisulfone) imidate employed as an anion of PAG occurred more efficiently than that of nonaflate employed as an anion of PAG. Therefore, the anion of PAG contributes to achieve a fast photospeed under EUV exposure. Furthermore, from the sensitivity curve measurements, it is found that tri-phenylsulfonium employed as a cation increases the developing rate more than diphenyl-naphthylsulfonium employed as a cation of PAG. As a result, we have succeeded in developing a fast photospeed chemically amplified resist that has a sensitivity of 1.1 mJ/cm2 and a partial pressure displacement accumulated in the total exposure time between after and before exposures on the order of 10-6 Pa s.

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“…1 An EUVL mask consists of a reflective substrate covered with absorber patterns. 1 An EUVL mask consists of a reflective substrate covered with absorber patterns.…”

Section: Introductionmentioning

confidence: 99%

Prediction of placement error of extreme ultraviolet lithography mask by simulation model with equivalent layout pattern

Chiba¹,

Hoshino²,

Takahashi³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffect of electrostatic chucking and substrate thickness uniformity on extreme ultraviolet lithography mask flatness J.An equivalent modeling technique for estimating the deformation of extreme ultraviolet lithography ͑EUVL͒ masks caused by a complex pattern layout has been developed. An equivalent layout pattern ͑ELP͒ model provides a means of investigating ways of improving pattern placement accuracy. The simulation model is based on the finite difference method. In order to investigate the possibility of making EUVL masks with a high pattern placement accuracy, the ELP model was used to simulate how pattern density and substrate thickness affect placement error. The results obtained agree well with those for an exact model, with the relative error being at most 4%. They suggest that, when the stresses of the multilayer and absorber films cannot be reduced, it may be useful to increase the substrate thickness to improve the pattern placement accuracy. In addition, when the exposure field covers two chips, the placement error should be reduced through proper control of the stress of the absorber film rather than by changing the absorber coverage.

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Development of the large field extreme ultraviolet lithography camera

Cited by 14 publications

References 13 publications

Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU

Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU

Development of Fast-Photospeed Chemically Amplified Resist in Extreme Ultraviolet Lithography

Prediction of placement error of extreme ultraviolet lithography mask by simulation model with equivalent layout pattern

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