Development of Transient Voltage Suppressor Device with Abrupt Junctions Embedded by Epitaxial Growth Technology

Choi, Sang-Sik; Cho, D. H.; Shim, Kyu–Hwan

doi:10.3365/eml.2009.06.059

Cited by 15 publications

(12 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3). Typical smaller dynamic is a strong point in terms of minimizing the energy absorption of the device as well as Joule heating and improved ESD performance as found in previous works [2,3]. The heating problem is known to be the major cause of degradation and failure in devices.…”

Section: Device Simulation and Resultsmentioning

confidence: 81%

“…So the low voltage ESD protection device is required to maintain the reliability of such electronic components against ESD damages. The nonsnapback transient suppressor (TVS) diode, operated in avalanche breakdown condition, is recognized to be close to the ideal ESD protection device that offer desirable electrical and ESD characteristics, including fast response time, low operating and clamping voltage, and no device degradation [2,3]. On the other hand, TVS diodes with low breakdown voltage, less than 5 V, requires heavy doping of the base layer and operation in tunneling mechanism that is known as a Zener diode [4].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Bouangeune¹,

Vilathong²,

Cho³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

show abstract

Section: Device Simulation and Resultsmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Bouangeune¹,

Vilathong²,

Cho³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

show abstract

“…At first, we may discuss the temperature compensation for the bidirectional TVS diode, as imaged as a pair of back to back unidirectional TVS diodes as shown in Fig. 4 respectively [9,10]. The BV value decreases as the temperature increases while ∆V D > ∆BV Uni .…”

Section: Methodsmentioning

confidence: 99%

“…Conventional, punch-through diodes are essentially three-layer structures (n + pn + or p + np + ) using wide lightly doped base region, which leads to high dynamic resistance (turn on resistance) [7,8]. In previous works [9,10] junction structures using epitaxial layers. To avoid the snapback phenomenon, the p-n-p structure is known more attractive in fact [11].…”

Section: Introductionmentioning

confidence: 99%

Bidirectional Transient Voltage Suppression Diodes for the Protection of High Speed Data Line from Electrostatic Discharge Shocks

Bouangeune¹,

Choi²,

Choi³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

Abstract-A bidirectional transient voltage suppression (TVS) diode consisting of specially designed p --n ++ -p -multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multijunctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K -450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped n ++ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as 0.2 Ω, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ± 4.0 kV of MM and ± 14 kV of IEC, and exceeding ± 8 kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in p -n ++ p -multi-junctions.

show abstract

“…Next, the active area windows of field oxide were opened by using the dry etching process. Two p + regions were formed by boron implantation at energy of 80 kV with a dose of 5×10 14 /cm 2 through a square shaped pattern of 90×120 μm 2 in size of field oxide window growth on n-Si. Finally, aluminum (Al) and gold (Au) electrode metals, each with a thickness of 300 nm, were sequentially deposited on the p + regions by using an electron beam evaporator.…”

Section: Experiments Proceduresmentioning

confidence: 99%

High Performance ESD/Surge Protection Capability of Bidirectional Flip Chip Transient Voltage Suppression Diodes

Pharkphoumy¹,

Khurelbaatar²,

Janardhanam³

et al. 2016

Transactions on Electrical and Electronic Materials

View full text Add to dashboard Cite

We have developed new electrostatic discharge (ESD) protection devices with, bidirectional flip chip transient voltage suppression. The devices differ in their epitaxial (epi) layers, which were grown by reduced pressure chemical vapor deposition (RPCVD). Their ESD properties were characterized using current-voltage (I-V), capacitance-voltage (C-V) measurement, and ESD analysis, including IEC61000-4-2, surge, and transmission line pulse (TLP) methods. Two BD-FCTVS diodes consisting of either a thick (12 μm) or thin (6 μm), n-Si epi layer showed the same reverse voltage of 8 V, very small reverse current level, and symmetric I-V and C-V curves. The damage found near the corner of the metal pads indicates that the size and shape of the radius governs their failure modes. The BD-FCTVS device made with a thin n-epi layer showed better performance than that made with a thick one in terms of enhancement of the features of ESD robustness, reliability, and protection capability. Therefore, this works confirms that the optimization of device parameters in conjunction with the doping concentration and thickness of epi layers be used to achieve high performance ESD properties.

show abstract

Development of Transient Voltage Suppressor Device with Abrupt Junctions Embedded by Epitaxial Growth Technology

Cited by 15 publications

References 5 publications

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

Bidirectional Transient Voltage Suppression Diodes for the Protection of High Speed Data Line from Electrostatic Discharge Shocks

High Performance ESD/Surge Protection Capability of Bidirectional Flip Chip Transient Voltage Suppression Diodes

Contact Info

Product

Resources

About