Development of Ultra-Fast Semiconducting Scintillators Using Quantum Confinement Effect

Shibuya, Kengo; Koshimizu, Masanori; Murakami, Hidetoshi; Muroya, ü. Yusa; Katsumura, Yosuke; Asai, Keisuke

doi:10.1143/jjap.43.l1333

Cited by 88 publications

(68 citation statements)

References 23 publications

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“…Some trials to create such "crystal-in-crystal" systems have been reported in literature [152,153], but the creation of sufficiently high concentration of nanocrystals in a bulk crystalline matrix appears not much feasible. Furthermore, nanocrystals of direct-gap semiconductors (so called quantum dots) were embedded both in organic or inorganic host for this purpose as well [154,155]. In this case a possibility to obtain superfast scintillation response thanks to Wannier exciton-based luminescence response is of interest and high light yield and promising energy resolution was found in [155] as well.…”

Section: Orthosilicate Single Crystalsmentioning

confidence: 99%

Complex oxide scintillators: Material defects and scintillation performance

Nikl¹,

Laguta

Vedda

2008

Physica Status Solidi (b)

198

106

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An overview of recognized structural defects, impurities and related trapping levels and their role in the scintillation mechanism is provided and discussed in single crystal materials belonging to tungstate, Ce‐ or Pr‐doped aluminum perovskite, garnet and finally to Ce‐doped silicate scintillators. New achievements and open problems in deeper understanding of electron and hole self‐trapping phenomena and of the nature of defects in the crystal structure and their ability to localize migrating charge carriers are indicated. Fast optical ceramics and nanocomposite materials are pointed out as possible future advanced scintillators. Such novel technologies can in principle explore materials which are not available in the bulk single crystal form, but their figure‐of‐merit is dramatically dependent on the surface‐interface defect states and related trapping and nonradiative recombination phenomena. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Orthosilicate Single Crystalsmentioning

confidence: 99%

Complex oxide scintillators: Material defects and scintillation performance

Nikl¹,

Laguta

Vedda

2008

Physica Status Solidi (b)

198

106

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“…7,8 These materials are being considered for several optoelectronic applications. [9][10][11][12][13][14] Moreover, since these materials have no well-width fluctuation and no lattice mismatch, they are suitable for the fundamental study of the excitonic properties in 2D systems. Due to the ideal 2D hybrid structure, excitons are tightly confined in the inorganic monomolecular layer of [PbX 6 ] 4− (X = I,Br,Cl) octahedra placed between organic barrier layers consisting of alkyl-ammonium or phenylethyl-ammonium chains.…”

Section: Introductionmentioning

confidence: 99%

Influence of the image charge effect on excitonic energy structure in organic-inorganic multiple quantum well crystals

2013

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We have experimentally compared the excitonic properties of hybrid multiple quantum wells, (C 6 H 5 -C 2 H 4 NH 3 ) 2 PbBr 4 and (C 4 H 9 NH 3 ) 2 PbBr 4 , using photoluminescence, reflection, and photoluminescence excitation measurements. We focused on the contribution of the image charge effect (ICE) to the excitonic energy structure in these materials which have different dielectric constants of the barrier layers. We have found that the binding energies of the 2s and 3s excitons are considerably enhanced by ICE, while the contribution of ICE to the 1s excitons is smaller because of the small Bohr radius, which is comparable to the well width.

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“…Particular attention has been paid to the role played by RE-rich phase nanostructures on both the resonant energy transfer and concentration quenching [7]. Very recently, interest in nanomorphological scintillator materials arose, in order to produce composite materials constituted by scintillating nanophases embedded into an inert host [8,9]. Sol-gel technology appears a possible tool in this respect [10].…”

Section: Introductionmentioning

confidence: 99%