Development of Ultrahigh-Voltage SiC Devices

Fukuda, Kenji; Okamoto, Daisuke; Okamoto, Mitsuo; Deguchi, Takao; Mizushima, Tomonori; Takenaka, Kensuke; Fujisawa, Hiroyuki; Harada, Shinsuke; Tanaka, Yasunori; Yonezawa, Yoshiyuki; Kato, Tomohisa; Katakami, Shuji; Arai, M.; Takei, Masahiro; Matsunaga, Shinichiro; Takao, Kazuto; Sügimura, Takashi; Izumi, Teruo; Hayashi, Toshihiko; Ogata, S.; Asano, Kōichi; Okumura, Hajime; Kimoto, Tsunenobu

doi:10.1109/ted.2014.2357812

Cited by 83 publications

(35 citation statements)

References 14 publications

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“…3), the optimum operating frequency f 0 in order to fulfill the load matching condition at full load is given as 1with k as magnetic coupling factor between the transformer's primary-side and secondary-side. To achieve a load-independent voltage transfer ratio, the resonance capacitors have to be dimensioned as [53]: (2) In this operating point (which is slightly above the resonance), the phase angle of the input impedance seen by the fullbridge is (3) and hence guarantees ZVS operation of the MOSFETs due to the inductive behavior [53]. Furthermore, due to this particular compensation method, the primary-side rms current is independent of the inductances, the magnetic coupling, and the operating frequency, and can be calculated as 4The secondary-side current is ideally in phase to the rectangular voltage applied from the rectifier and its rms value can be calculated as (5)…”

Section: A Isolated Power Supply Topologymentioning

confidence: 99%

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Rothmund¹,

Bortis²,

Kolar³

2018

CPSS TPEA

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Section: A Isolated Power Supply Topologymentioning

confidence: 99%

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Rothmund¹,

Bortis²,

Kolar³

2018

CPSS TPEA

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“…In recent years, ultrahigh-voltage SiC pin diodes [11][12][13], thyristors [14], bipolar junction transistors [15], and insulated-gate bipolar transistors (IGBTs) [16][17][18] have been reported. Using 10 kV SiC MOSFETs or 15 kV SiC IGBTs, several power converters such as boost converters and modular-leg converters have been fabricated, demonstrating good power efficiencies [19][20][21][22].…”

Section: Of 15mentioning

confidence: 99%

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

et al. 2016

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Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

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“…There is no doubt that 4H-silicon carbide (SiC) material will play an increasingly important role in ultra-high voltage supply system or low-power loss industrial applications, given its excellent intrinsic structure and physical properties, especially in the future smart grids which contain high voltage DC power distribution and flexible AC transmission [1][2][3]. Research has reported that 4H-SiC power devices have excellent performance in both 50-150 kW DC power supplies and 60-126 kV voltage supplies [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

Liu

Yang

Wang³

et al. 2019

Materials

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In this paper, a 13.4 kV/55 A 4H-silicon carbide (SiC) PiN diode with a better trade-off between blocking voltage, differential on-resistance, and technological process complexity has been successfully developed. A multiple zone gradient modulation field limiting ring (MGM-FLR) for extremely high-power handling applications was applied and investigated. The reverse blocking voltage of 13.4 kV, close to 95% of the theoretical value of parallel plane breakdown voltage, was obtained at a leakage current of 10 µA for a 100 µm thick, lightly doped, 5 × 10 14 cm −3 n-type SiC epitaxial layer. Meanwhile, a fairly low differential on-resistance of 2.5 mΩ·cm 2 at 55 A forward current (4.1 mΩ·cm 2 at a current density of 100 A/cm 2 ) was calculated for the fabricated SiC PiN with 0.1 cm 2 active area. The highest Baliga's figure-of-merit (BFOM) of 72 GW/cm 2 was obtained for the fabricated SiC PiN diode. Additionally, the dependence of the breakdown voltage on transition region width, number of rings in each zone, as well as the junction-to-ring spacing of SiC PiN diodes is also discussed. Our findings indicate that this proposed device structure is one potential candidate for an ultra-high voltage power system, and it represents an option to maximize power density and reduce system complexity.

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Development of Ultrahigh-Voltage SiC Devices

Cited by 83 publications

References 14 publications

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

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