Development of vacuum ultraviolet absorption spectroscopy technique employing nitrogen molecule microdischarge hollow cathode lamp for absolute density measurements of nitrogen atoms in process plasmas

Takashima, Seigou; Arai, Shigeo; Hori, Masaru; Goto, Toshio; Kono, Akihiro; Ito, Masafumi; Yoneda, Katsumi

doi:10.1116/1.1340655

Cited by 69 publications

(45 citation statements)

References 10 publications

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“…15,16 The size of the hollow cathode was as small as 0.1 mm in diameter, resulting in a high current density in the cathode, which is favorable for attaining high dissociation degree of gases and obtaining spectral emission. Moreover, since the MHCL was compact ͑80ϫ80ϫ160 mm͒, the system for measuring a͒ Author to whom correspondence should be addressed; electronic mail: h-nagai@nuee.nagoya-u.ac.jp atom density can be easily installed to the process chamber.…”

Section: Introductionmentioning

confidence: 99%

Measurement of oxygen atom density employing vacuum ultraviolet absorption spectroscopy with microdischarge hollow cathode lamp

Nagai

Hiramatsu

Hori

et al. 2003

Review of Scientific Instruments

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Articles you may be interested inDevelopment of measurement technique for carbon atoms employing vacuum ultraviolet absorption spectroscopy with a microdischarge hollow-cathode lamp and its application to diagnostics of nanographene sheet material formation plasmas Use of multiwavelength emission from hollow cathode lamp for measurement of state resolved atom density of metal vapor produced by electron beam evaporation Rev. Sci. Instrum. 79, 093305 (2008); 10.1063/1.2987689 Development of vacuum ultraviolet absorption spectroscopy technique employing nitrogen molecule microdischarge hollow cathode lamp for absolute density measurements of nitrogen atoms in process plasmas Determination of fluorine atom density in reactive plasmas by vacuum ultraviolet absorption spectroscopy at 95.85 nm Rev. The compact measurement system for absolute density of oxygen ͑O͒ atom has been developed, which employs a vacuum ultraviolet absorption spectroscopy ͑VUVAS͒ technique with a high-pressure microdischarge hollow cathode lamp ͑MHCL͒ as a light source. The influences of self-absorption, emission line profile of the MHCL, and background absorption of oxygen molecule (O 2 ) on the determination of absolute O atom density were taken into consideration. This system has been applied for measuring absolute O atom densities in an inductively coupled O 2 plasma. O atom densities were estimated to be on the order of 1ϫ10 12 -1ϫ10 13 cm Ϫ3 at an input power of 100 W and an O 2 pressure ranging from 1.3 to 26.7 Pa. The behavior of O atom density measured using VUVAS technique was consistent with that obtained by actinometry technique using O emission intensities of 844.6 nm and 777.4 nm lines. Moreover, the lifetime of O atom in the afterglow plasma has been measured. The decay curves of the O atom density were fitted with exponential functions. The extinction process of O atom in the inductively coupled O 2 plasma has been discussed.

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Section: Introductionmentioning

confidence: 99%

Measurement of oxygen atom density employing vacuum ultraviolet absorption spectroscopy with microdischarge hollow cathode lamp

Nagai

Hiramatsu

Hori

et al. 2003

Review of Scientific Instruments

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“…Even if the temperature of the H atoms in the measured plasma is three times as high as 400 K, the calculated H-atom concentrations are within a factor of 2. 29 For measuring the background absorption at L ␣ , the VUVAS employing the N 2 -MHCL was developed. The source was operated at a total pressure of 100 kPa and a discharge current of 10 mA.…”

Section: Introductionmentioning

confidence: 99%

Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas

Takashima

Hori

Goto

et al. 2001

Journal of Applied Physics

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“…However, the absolute density of the radicals has not been well examined. In this study, a high-density radical source (HDRS) was developed as the nitrogen source for the PA-MBE system and the absolute density was measured by vacuum ultraviolet absorption spectroscopy (VUVAS) [2,3]. The HDRS basically consists of inductively coupled plasmas.…”

Section: Introductionmentioning

confidence: 99%

Achieving high‐growth‐rate in GaN homoepitaxy using high‐density nitrogen radical source

Kawai

Chen

Honda

et al. 2011

Phys. Status Solidi C

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The key issue in GaN growth by radio‐frequency plasma‐assisted molecular beam epitaxy is the low growth rate compared with that obtained using an ammonia source. To reduce the processing time and to improve the crystalline quality of the epilayer, a high‐density radical source (HDRS) with high stability has been developed. The growth rate of the GaN epilayer was improved using the HDRS rather than a conventional radical source. During the growth, a sharp streak pattern obtained by reflection high‐energy electron diffraction was maintained. An atomically smooth surface was confirmed by atomic force microscopy observation (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Development of vacuum ultraviolet absorption spectroscopy technique employing nitrogen molecule microdischarge hollow cathode lamp for absolute density measurements of nitrogen atoms in process plasmas

Cited by 69 publications

References 10 publications

Measurement of oxygen atom density employing vacuum ultraviolet absorption spectroscopy with microdischarge hollow cathode lamp

Measurement of oxygen atom density employing vacuum ultraviolet absorption spectroscopy with microdischarge hollow cathode lamp

Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas

Achieving high‐growth‐rate in GaN homoepitaxy using high‐density nitrogen radical source

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