Development on transparent conductive ZnO thin films doped with various impurity elements

Abstract

A general review of recent research progress in fabricating transparent conductive ZnO thin films by means of intentional doping and codoping with In, Ga, Al, Mg, Li, F, H, N, and P, divided into metals and nonmetals, is presented in this article. The main emphasis is placed on introducing and discussing the recent research achievements on the mechanisms of the incorporation of these impurities, and their effects on the electrical and optical properties. Lastly, this article concludes with a summary of the present state of investigations on doping elements in fabricating functional ZnO thin films for photoelectric applications, and with our personal view of the perspective of future studies on doped ZnO thin films.

Assessment of Inclusion Removal Ability in Refining Slags Containing Ce2O3

“…It is noted that the rare earth metal addition in liquid steel in ingot casting processes have been widely investigated in 1940-1970s [116][117][118]. The clogging of the submerged entry nozzles of RE oxide inclusions have hindered the application of RE element addition in steels in continuous casting routes [119]. Later, in the 1970s, the phase diagram of Al 2 O 3 -REO X was systematically measured by Mizuno et al [120,121].…”

Relation between synthesis conditions, dopant position and charge carriers in aluminium-doped ZnO nanoparticles

“…ZnO is one of the most important wide-band-gap materials (3.3 eV, at 300 K) that has superior electronic and optical properties. [1][2][3][4] As a low cost and non-toxic II-VI semiconductor, its promising applications in thin-film transistors, [5][6][7] dyesensitized solar cells, 8,9 gas sensors, 10,11 varistors 12,13 and transparent conductive oxides or TCOs 14,15 have initiated intensive research. However, doping may be necessary to enhance its performance in view of electronic and optoelectronic devices.…”

Effects of Post-Annealing on the Properties of ZnO:Ga Films with High Transparency (94%) and Low Sheet Resistance (29 Ω/square)

“…The increase in mobility with increasing temperatures up to 450 • C was due to oxygen desorption at the grain boundary, which lowered the barrier potential [23]. The changes in carrier concentration and mobility were caused by the chemical reaction and the removal of oxygen [24] or the additional Ga 3+ providing extra electrons [3].…”

“…Zinc oxide-based materials are good candidates because they are low-cost and non-toxic. Given that the conductivity of pure zinc oxide is not adequate for the desired purposes, group III elements, such as aluminum and gallium, are used as doping materials to provide extra electrons [3]. Compared with the covalent bond length of Zn-O, the variations in the covalent bond length of Al-O and Ga-O are 0.13 and 0.05 Å, respectively.…”