2008
DOI: 10.1143/jjap.47.1435
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Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

Abstract: Plasma etching technologies such as reactive ion etching (RIE), isotropic etching, and ashing/plasma cleaning are the currently used booster technologies for manufacturing all silicon devices based on the scaling law. The needs-driven conversion from the wet etching process to the plasma/dry etching process is reviewed. The progress made in plasma etching technologies is described from the viewpoint of requirements for the manufacturing of devices. The critical applications of RIE, isotropic etching, and plasm… Show more

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Cited by 284 publications
(173 citation statements)
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“…51 The PECVD has also been successfully implemented to dope CNT and graphene. 55,56 Plasma based techniques have been predominantly applied to the initial synthesis of carbon-based materials rather than post processing.…”
Section: Plasma In Carbon Nanotechnologymentioning
confidence: 99%
“…51 The PECVD has also been successfully implemented to dope CNT and graphene. 55,56 Plasma based techniques have been predominantly applied to the initial synthesis of carbon-based materials rather than post processing.…”
Section: Plasma In Carbon Nanotechnologymentioning
confidence: 99%
“…This leads to the removal of material from the sample by localized reactive-ion etching, a process widely used in fabrication facilities. 21 Once a small pore is formed its edges are the preferred sites for bonding with nitrogen ions, pores are therefore observed to grow radially on the irradiated graphene surface.…”
mentioning
confidence: 99%
“…fluorine chemistries to etch SiO 2 and chlorine chemistries to etch aluminium). High etch rate single wafer etchers were developed and employed with improved uniformity and etch rate control [29].…”
Section: (C) Etching Technologymentioning
confidence: 99%
“…Since the plasma etch processes 'hardened' the surface of the resist to wet chemical strips, oxygen plasma cleans (ashing) [29] were developed to strip the hydrocarbon resist and residue from the surface of the wafer. This was followed by chemical cleans to remove non-polymer etch residues.…”
Section: (C) Etching Technologymentioning
confidence: 99%