Device and Technology Evolution for Si-Based RF Integrated Circuits

Bennett, Herbert S.; Brederlow, R.; Costa, J.; Cottrell, P.E.; Huang, Weicheng; Immorlica, A.A.; Mueller, Jan-Erik; Racanelli, M.; Shichijo, H.; Weitzel, C.E.; Zhao, Bin

doi:10.1109/ted.2005.850645

Cited by 102 publications

(41 citation statements)

References 144 publications

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“…[1] Such applications include multifunctional portable phones, blue tooth, office voice, video and data transmission through wireless local area networks (WLAN), global positioning systems (GPS), and automotive safety control, among others. [2] However, this rapidly growing wireless industry needs new advanced technologies to fabricate low cost, high density, small size, and lightweight integrated components and modules.…”

Section: Introductionmentioning

confidence: 99%

Textured Microstructure and Dielectric Properties Relationship of BaNd₂Ti₅O₁₄ Thick Films Prepared by Electrophoretic Deposition

Vilarinho

et al. 2009

Adv Funct Materials

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An alternative approach to tailor the temperature coefficient of permittivity (TCεr) of high Q dielectric BaO–Re2O3–TiO2 (Re: rare earth elements) thick films is presented. 10‐ to 80‐µm‐thick BaNd2Ti5O14 (BNT) films are fabricated by electrophoretic deposition on Pt foils under different processing conditions. Observed anisotropic grain growth is facilitated by constrained sintering. The increase of the sintering temperature increases markedly the aspect ratio of the grains, decreases the dielectric permittivity and TCεr changes from −114 to +12 ppm °C−1. By controlling the sintering temperature, near‐zero TCεr, high Q thick films can be fabricated with 45 < εr < 70. These findings are of technological relevance since they demonstrate that control of substrate constraint and sintering conditions can be used to control grain anisotropy and thus microwave properties of the BaO–Re2O3–TiO2. The thick films facilitate scaling to small device sizes for high frequency operation. Similar observations are expected in other microwave systems thus opening further technological opportunities.

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Section: Introductionmentioning

confidence: 99%

Textured Microstructure and Dielectric Properties Relationship of BaNd₂Ti₅O₁₄ Thick Films Prepared by Electrophoretic Deposition

Vilarinho

et al. 2009

Adv Funct Materials

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“…During the last decade, considerable effort has been spent on researching Si and CMOS-based RFICs for wireless handheld applications [2]- [5]. The digital baseband circuits have now successfully been integrated in CMOS as well as most of the radio building blocks.…”

Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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“…Precise and temperature-stable resistors also require some additional fabrication steps in the interconnect (see e.g. [14]). Inductors fabricated in the standard metallization layers of IC's can fulfill the needs of many analog-RF designers.…”

Section: Novel Electronic Componentsmentioning

confidence: 99%

Gridpix - Chip Post-processing

Schmitz¹

2010

Proceedings of VERTEX 2009 (18th Workshop) — PoS(VERTEX 2009)

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InGrid, the technology used to make CMOS-integrated high voltage electrodes for micropattern gaseous detectors is reviewed in this paper. It is presented in the broader context of CMOS wafer post-processing. This processing platform is briefly described, and recent highlights of this manufacturing approach are brought forward. The InGrid technology facilitates research into radiation imaging detectors with fully integrated electronics. VERTEX 2009 (18th workshop)

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Device and Technology Evolution for Si-Based RF Integrated Circuits

Cited by 102 publications

References 144 publications

Textured Microstructure and Dielectric Properties Relationship of BaNd₂Ti₅O₁₄ Thick Films Prepared by Electrophoretic Deposition

Textured Microstructure and Dielectric Properties Relationship of BaNd₂Ti₅O₁₄ Thick Films Prepared by Electrophoretic Deposition

A Review of Watt-Level CMOS RF Power Amplifiers

Gridpix - Chip Post-processing

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Device and Technology Evolution for Si-Based RF Integrated Circuits

Cited by 102 publications

References 144 publications

Textured Microstructure and Dielectric Properties Relationship of BaNd2Ti5O14 Thick Films Prepared by Electrophoretic Deposition

Textured Microstructure and Dielectric Properties Relationship of BaNd2Ti5O14 Thick Films Prepared by Electrophoretic Deposition

A Review of Watt-Level CMOS RF Power Amplifiers

Gridpix - Chip Post-processing

Contact Info

Product

Resources

About

Textured Microstructure and Dielectric Properties Relationship of BaNd₂Ti₅O₁₄ Thick Films Prepared by Electrophoretic Deposition

Textured Microstructure and Dielectric Properties Relationship of BaNd₂Ti₅O₁₄ Thick Films Prepared by Electrophoretic Deposition