Device Characteristics of an 11.4% CZTSe Solar Cell Fabricated from Sputtered Precursors

Taskesen, Teoman; Neerken, Janet; Schoneberg, Johannes; Pareek, Devendra; Steininger, Vincent; Parisi, J.; Gütay, Levent

doi:10.1002/aenm.201703295

Cited by 86 publications

(73 citation statements)

References 33 publications

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“…This champion sputtering‐based solar cell was fabricated in a different batch, using the optimized baseline process, achieving an efficiency greater than 11%, and is shown for comparison. As can be seen, relatively high current densities are achieved, exceeding 39 mA/cm 2 , which are at the same level of the best cells reported so far for the pure selenide CZTSe compound . Nonetheless, V OC and especially FF values remain still lower compared with these record devices.…”

Section: Resultssupporting

confidence: 70%

“…Currently, the certified highest efficiency (12.6%) has been achieved using hydrazine‐based solution approach, although the wide variety of deposition techniques, like coevaporation, sputtering, spray, spin‐coating, or doctor‐blade coating, have also given efficiencies above 10%.…”

Section: Introductionmentioning

confidence: 99%

“…While nonvacuum techniques include solution processing via spin-coating 13 /dip-coating 14 /doctor-blade-coating 15 /spray 16,17 / ink-jet printing of the precursor, 18 or electrochemical deposition. 19 Currently, the certified highest efficiency (12.6%) has been achieved using hydrazine-based solution approach, 20 although the wide variety of deposition techniques, like coevaporation, 8,21 sputtering, 11,[22][23][24][25] spray, 26 spin-coating, 27,28 or doctor-blade coating, 29 have also given efficiencies above 10%.…”

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confidence: 99%

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Study and optimization of alternative MBE‐deposited metallic precursors for highly efficient kesterite CZTSe:Ge solar cells

Giraldo

Kim

Andrade‐Arvizu

et al. 2019

Progress in Photovoltaics

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Nowadays, most of the best efficiencies of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells are obtained from absorber layers fabricated using sequential processes, including the deposition of metallic stack precursors, typically by sputtering, and followed by reactive annealing under chalcogen atmosphere. The sputtering technique is widely known for the easy growth of metallic layers, although the deposition rates, growth morphology and nucleation, or the roughness can sometimes be an issue leading to inhomogeneities in the final layers. Nevertheless, MBE (molecular beam epitaxy) technique could have some advantages to obtain high‐quality metallic layers, with accurate control of the growth due to ultra‐high vacuum conditions and high purity. In this work, we study the use of advanced MBE systems to grow metallic stack precursors, alternatively to sputtering or thermal evaporation techniques, to obtain high‐quality CZTSe:Ge absorbers. Due to differences in the nature of each type of precursor, thermal annealing optimizations are presented by modifying some critical selenization parameters, such as the temperature or the selenium amount in order to obtain well‐crystallized absorbers. Detailed morphological, compositional, and structural characterizations show relevant features of each precursor, mainly related to the formation of MoSe2 at the back interface, and Se and Sn composition after selenization in different conditions. Regarding the solar cell devices, main efficiency limitations come from VOC and FF, which could be tentatively related to a noncontrolled selenization; different precursor reactivity, porosity, or composition; and different alkali diffusion during the reactive annealing. Finally, in the first optimization, a 9.2% efficiency device has been achieved with promising perspectives for future improvements.

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Section: Resultssupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Study and optimization of alternative MBE‐deposited metallic precursors for highly efficient kesterite CZTSe:Ge solar cells

Giraldo

Kim

Andrade‐Arvizu

et al. 2019

Progress in Photovoltaics

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“…It is worth to mention that there could be secondary phases underneath the surface, which is very likely at this composition range. Our previous work showed that a small quantity of ZnSe secondary phase exists at the back side of the absorber …”

Section: Resultsmentioning

confidence: 99%

“…In this report, we present our results from an easy to adapt two‐stage approach for fabrication of kesterite thin film absorbers, which contains the vacuum deposition of a metallic precursor layer followed by an annealing step under chalcogen vapor at high temperatures. The process leads to device efficiencies above 11% . We focus on the annealing process and demonstrate the impact of the reactor pressure during selenization and the resulting final composition of CZTSe absorbers.…”

Section: Introductionmentioning

confidence: 99%

Resilient and reproducible processing for CZTSe solar cells in the range of 10%

Taskesen

Steininger

Chen

et al. 2018

Progress in Photovoltaics

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In this paper, we present our route to fabricate Cu2ZnSnSe4 (CZTSe) thin films, which allows to achieve reproducible processing of kesterite absorber, that leads to efficiencies in the range of 10%. The article mainly focuses on the annealing process and demonstrates that controlling of the reactor pressure for selenization can be reliably used to tune the losses of volatile constituents in the absorber, enabling adjustments on the properties of the film and solar cell. The findings reveal a noteworthy resilience to small changes of the process parameters in the vicinity of optimum conditions. Interestingly, a certain pressure range for optimum Zn and Sn composition exists, which results in a broad and stable process window and enables reproducible processing of CZTSe with high power conversion efficiencies. The established process also allows simple upscaling of the device area and results in a power conversion efficiency of ≈ 8% on a large area of 2.85 cm2. The highest efficiencies achieved by our process are around 11% for smaller lab scale devices.

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Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

et al. 2019

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The latest progress and future perspectives of thin film photovoltaic kesterite technology are reviewed herein. Kesterite is currently the most promising emerging fully inorganic thin film photovoltaic technology based on critical raw-material-free and sustainable solutions. The positioning of kesterites in the frame of the emerging inorganic solar cells is first addressed, and the recent history of this family of materials briefly described. A review of the fast progress achieved earlier this decade is presented, toward the relative slowdown in the recent years partly explained by the large opencircuit voltage (V OC ) deficit recurrently observed even in the best solar cell devices in the literature. Then, through a comparison with the close cousin Cu(In,Ga)Se 2 technology, doping and alloying strategies are proposed as critical for enhancing the conversion efficiency of kesterite. In the second section herein, intrinsic and extrinsic doping, as well as alloying strategies are reviewed, presenting the most relevant and recent results, and proposing possible pathways for future implementation. In the last section, a review on technological applications of kesterite is presented, going beyond conventional photovoltaic devices, and demonstrating their suitability as potential candidates in advanced tandem concepts, photocatalysis, thermoelectric, gas sensing, etc.Kesterite Photovoltaics He has supervised ten Ph.D. theses in the photovoltaic field. He is currently the coordinator of the research and innovation H2020 project STARCELL (www.starcell.eu), and the RISE (Marie Curie) project INFINITE-CELL (www.infinite-cell.eu).the V OC deficit for bandgaps close to 1.0 or 1.5 eV are comparable, and one can consider that kesterite is reasonably close to the state of the art of chalcopyrite materials in that range. But, while for kesterite the V OC deficit increases almost monotonically with the bandgap, it is markedly reduced for intermediate

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Device Characteristics of an 11.4% CZTSe Solar Cell Fabricated from Sputtered Precursors

Cited by 86 publications

References 33 publications

Study and optimization of alternative MBE‐deposited metallic precursors for highly efficient kesterite CZTSe:Ge solar cells

Study and optimization of alternative MBE‐deposited metallic precursors for highly efficient kesterite CZTSe:Ge solar cells

Resilient and reproducible processing for CZTSe solar cells in the range of 10%

Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

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