Device Characterization of p/i/n Thin-Film Phototransistor for Photosensor Applications

Kimura, Mutsumi; Miura, Yuta; Ogura, Takeshi; Shiro, Ohno; Hachida, Tomohisa; Nishizaki, Yoshitaka; Yamashita, T.; Shima, Takehiro

doi:10.1109/led.2010.2052234

Cited by 15 publications

(6 citation statements)

References 10 publications

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“…The drain current was gradually increased as the incident light intensity (P IN ) increased, while the threshold voltage was largely shifted toward the positive gate voltage regions (see Figure S9 ). This result implies that the present flexible PDLC-i-OFET devices act as a photosensor, specifically a phototransistor when it comes to the photocurrent change controlled by the gate voltages 38 – 42 . Here it is noted that the P3HT part plays a key role in photosensing at the wavelength of 550 nm because of no optical absorption by the 5CB molecules 21 , 43 .…”

Section: Resultsmentioning

confidence: 81%

Ultrasensitive Multi-Functional Flexible Sensors Based on Organic Field-Effect Transistors with Polymer-Dispersed Liquid Crystal Sensing Layers

Song

Seo

Kim

et al. 2017

Sci Rep

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Ultrasensitive flexible sensors with multi-sensing functions are required for various applications in flexible electronics era. Here we demonstrate flexible polymer-dispersed liquid crystal (PDLC)-integrated-organic field-effect transistors (OFETs) (PDLC-i-OFETs), which sensitively respond to various stimulations including weak gas (air) flow, direct physical touch, light, and heat. The flexible PDLC-i-OFETs were fabricated by spin-coating the poly(methyl methacrylate) (PMMA)-dispersed 4,4’-pentyl-cyanobiphenyl (5CB) layers on the poly(3-hexylthiophene) (P3HT) channel layers of OFETs with 200 μm-thick poly(ethylene naphthalate) (PEN) substrates. The flexible PDLC-i-OFET devices could sense very weak nitrogen gas flow (0.3 sccm), which cannot be felt by human skins, and stably responded to direct physical touches (0.6~4.8 g load). In addition, the present devices showed very sensitive photoresponses to a visible light and exhibited excellent heat-sensing characteristics at a temperature of 25~70 °C. In particular, the present flexible PDLC-i-OFET devices could sense two different stimulations at the same time, indicative of promising multi-sensing capabilities.

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Section: Resultsmentioning

confidence: 81%

Ultrasensitive Multi-Functional Flexible Sensors Based on Organic Field-Effect Transistors with Polymer-Dispersed Liquid Crystal Sensing Layers

Song

Seo

Kim

et al. 2017

Sci Rep

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“…Following Brandbyge et al and Schirm et al, and assuming a similar current‐induced atomic scale relation of Cu at 650 mV, the estimated force imposed is in the order of 0.9 nN. It is reported that mechanical stress can change the dielectric breakdown in gate oxides . Therefore, during atomic rearrangement the generation of force is very obvious in ECBJ devices.…”

Section: Resultsmentioning

confidence: 91%

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

Banerjee

Hwang

2019

Adv Elect Materials

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electron charge and h is the Planck constant. [6] Electronic switches with atomicsized functional building blocks are the main driving force of modern nanotechnology. The design of atomic dimensional memory devices is limited by the lithographic bottleneck. Nevertheless, the origin of atomic contact in nanoscale architectures is being investigated. [7] The conductive bridge RAM device with quantized conductance (QC) effect proposed by Terebe et al., [8] was based on the fabrication of a gap-type Pt/ nano-gap/Ag 2 S/Ag structure. A small operating voltage of ±600 mV can switch the device between the "OFF" and "ON" states. When a device changes its resistance from high to low, it is usually known as "set"; the reverse change is known as "reset". The QC effect is suitable to realize multiple levels in devices and has been studied in both electrochemical metallization type [9][10][11][12][13][14] and valance change memory type [15,16] gap-less RRAM. In most cases, switching is the after-effect of a stress dependent virginity breakdown, which can consolidate the CF for switching operations. Because the behavior of the CF of conductive bridge RAM is considered to be an example of atomic-switching, further discussion is mainly focused on conductive bridge RAM type devices. Higher initial stress injects more cations into the switching oxide layer that results in poor control over the reset process, resulting in abrupt state transition, and atomic conductance instability. [9][10][11][12][13][14] In another approach, single-atom memory has been proposed for mechanically controllable break junctions (MCBJs), [17] which are a kind of electronic device formed by two knife-edged metal wires placed with a nanometer sized gap, as shown in Figure 1a. MCBJs are well known as atomic or single molecular junction, and have even been investigated to in the context of control of quantum interferences in graphene. [18,19] In an MCBJ, when the two wires are curved, broadening the gap, the contact is broken, and the reverse order experiences an atomic-contact at the break junction. Break junctions are a possible approach to the fabrication of atomic switches. However, in reality, for an electronic device, such design is burdensome due to exorbitant lithographic processes. It is possible to prepare a break junction by electrically controlling the ion migration process in conductive bridge RAM devices, as the switching mechanism is driven by the formation of metallic wire like CF. Although the concept of QC in conductive bridge RAM has been investigated for over a decade, precise and reliable atomic-level control Atomic-level control of conductance in a Cu/Ti/HfO 2 /TiN-based electrically controllable break junction (ECBJ) is demonstrated. The ECBJ is designed through sophisticated stack engineering and refined electrical operation. Control over bias-induced ion migration is the key to forming the ECBJ. Precise atomic-level control is accomplished with an optimized high temperature forming (OHTF) scheme. OHTF-controlled single-atomic switch...

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“…The photosensitivity becomes maximum when the gate terminal is connected to the anode region. 4 Moreover, the integrated drivers consist of decoders and selectors composed of the low-temperature poly-Si TFT. All pixels can be free-accessed by sending digital data to the decoders, the electric current is measured by the ampere meter, and the total scanning time is 64 ms.…”

Section: Poly-si Thin-film Phototransistor Arraymentioning

confidence: 99%

38‐2: Magnifying Viewer using Poly‐Si Thin‐Film Phototransistor and Liquid‐Crystal Micro‐Lens Array

Kimura

Kitajima

et al. 2020

Symp Digest of Tech Papers

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We have confirmed fundamental functions of a flatpanel imager using a poly-Si thin-film phototransistor and liquid-crystal microlens array. It is found that the electric current measured in the pixel on the white area is definitely larger than that on the black area. Particularly in this paper, it is clarified that the current difference for the lens-on state is more obvious than that for the lens-off state, and that for the polarizer-on state is also more obvious than that for the polarizer-off state. The experimental results are the same as what we expect and indicate the excellent effect of the liquid-crystal micro-lens array on the flatpanel imager using a poly-Si thin-film phototransistor. The magnifying viewer can be high-resolutional by the flatpanel imager using the poly-Si thin-film phototransistor and liquid-crystal micro-lens array.

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Device Characterization of p/i/n Thin-Film Phototransistor for Photosensor Applications

Cited by 15 publications

References 10 publications

Ultrasensitive Multi-Functional Flexible Sensors Based on Organic Field-Effect Transistors with Polymer-Dispersed Liquid Crystal Sensing Layers

Ultrasensitive Multi-Functional Flexible Sensors Based on Organic Field-Effect Transistors with Polymer-Dispersed Liquid Crystal Sensing Layers

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions

38‐2: Magnifying Viewer using Poly‐Si Thin‐Film Phototransistor and Liquid‐Crystal Micro‐Lens Array

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