Device design and optimization of CNTFETs for high-frequency applications

Abstract

Carbon nanotube (CNT) field-effect transistors (FETs) have recently reached high-frequency (HF) performance similar to that of silicon RF-CMOS at the same gate length despite a tube density and current per tube that are far from the physical limits and suboptimal device architecture. This work reports on an investigation of the optimal device design for practical HF applications in terms of cut-off frequencies, power gain, and linearity. Different fundamental designs in the gate contact arrangement are considered based on a 3D device simulation of both CNTs and contacts. First, unit cells with a single CNT and minimal contact sizes are compared. The resulting simulation data are then extended toward a structure with two gate fingers and realistic contact sizes. Corresponding parasitic capacitances, as well as series and contact resistances, have been included for obtaining realistic characteristics and figures of merit that can be used for comparison with corresponding silicon RF MOSFETs. Finally, a sensitivity analysis of the device architecture with the highest performance is performed in order to find the optimal device design space.

Structure Optimization of Carbon Nanotubes Based on Swarm Intelligence Algorithm and Evolutionary Computation

“…Figure 1 is an image of nanopowders. This material can be fired into high-density ceramics [18,19]. Until the end of the last century, the first International Conference on Nanoscience and Technology was held in the United States, which formally combined theoretical research with contemporary science and technology, marking the official birth of nanotechnology [20].…”

The design and performance of different nanoelectronic binary multipliers

“…The use of CNT channel material in a FET structure is considered to be a candidate approach to achieve lowpower, high-performance next-generation technology. To date, many circuit simulations [32][33][34], high-frequency applications [35], as well as fabrication-based studies on CNFET-based circuits [36][37][38][39][40][41] have been reported. Recent works on CNFET-based digital applications include the integration of logic gates and memory unis for microprocessor development [41].…”