Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate

Houin, Geoffroy; Duez, Frédéric; Garcia, Luc; Cantatore, Eugenio; Hirsch, Lionel; Belot, Didier; Pellet, Claude; Abbas, Mamatimin

doi:10.1088/2058-8585/aa8cb1

Cited by 10 publications

(12 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Devices operated at ultralow voltages ( V g < ‐1 V), have been reported previously but only achieved relatively low mobilities, such as 0.3 cm 2 V −1 s −1 for DDFTTF. On the other hand, high‐performance devices with charge carrier mobilities ≥ 1 cm 2 V −1 s −1 have been reported for operation voltages below 20 V . The devices that are closest in terms of mobility and threshold voltage to the transistors presented in this work operate at voltages in the range of 3–5 V …”

Section: Resultsmentioning

confidence: 67%

Solution Coating of Small Molecule/Polymer Blends Enabling Ultralow Voltage and High‐Mobility Organic Transistors

Rocha

Haase

Zheng

et al. 2018

Adv Elect Materials

View full text Add to dashboard Cite

Low‐voltage organic field‐effect transistors (OFETs) are of great interest for organic electronics applications that require low power consumption such as wearable electronics, biomedical applications, or mobile electronics. In this work, an approach leading to transistors fabricated from solution with high charge carrier mobilities operating at voltages < 1 V is presented. By blending the small‐molecule semiconductor 6,13‐bis(triisopropylsilyl‐ethynyl)pentacene (TIPS‐pentacene) with polystyrene it is possible to achieve good film coverage and uniformity as well as ultrathin semiconductor films. This reduction in thickness relative to neat films results in a high fraction of the high‐mobility polymorph of TIPS‐pentacene and excellent film morphologies with continuous highly crystalline domains. OFETs using SiO2 as the dielectric with average hole mobilities as high as 8.3 cm2 V−1 s−1 and maximum mobilities of up to 12.3 cm2 V−1 s−1 which favorably compares with the previous record for TIPS‐pentacene, especially when considering the simplicity of the approach, are demonstrated. By depositing the optimized semiconductor blends on solution‐based polymer dielectric layers of polyvinylphenol, cross‐linked with 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride, a record‐high mobility of 4.2 cm2 V−1 s−1 for solution‐processed, ultralow‐voltage OFET devices (operating at <1 V) is obtained.

show abstract

Section: Resultsmentioning

confidence: 67%

Solution Coating of Small Molecule/Polymer Blends Enabling Ultralow Voltage and High‐Mobility Organic Transistors

Rocha

Haase

Zheng

et al. 2018

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…As we know for organic FETs that are free of doping and operate in the accumulation regime, V T is defined by the work function misalignment between that of the gate and the semiconductor and the trapped charge at the dielectric–semiconductor interface, and S s reflects the charge leakage at the gate interface . The density of fixed charges ( N fix ) and the density of trap states ( N trap ) at the dielectric–semiconductor interface can be further extracted from the transfer curves of devices, where the values in our case [ N fix = (3.121 ± 0.1) × 10 11 cm –2 , and N trap = (1.875 ± 0.6) × 10 10 cm –2 eV –1 ] are lower by more than one order of magnitude than the previous results, which were also based on in situ -fabricated devices from PVT-grown crystals. ,,, The S s of the ultrathin crystal devices is ∼70 mV/decade, a value that is quite small for organic FETs and even near the theoretical minimum subthreshold swing of the silicon device, revealing a high-quality gate interface …”

Section: Resultsmentioning

confidence: 99%

Microspacing In-Air Sublimation Growth of Ultrathin Organic Single Crystals

Guo

Lin

et al. 2020

Chem. Mater.

View full text Add to dashboard Cite

Organic single crystals play indispensable roles in high-performance electronic devices because of their completely eliminated or minimized impurities and disorder, wherein ultrathin thickness is a critical prerequisite because charge accumulation in devices occurs within a few molecular monolayers of the semiconductors. The growth of organic crystals through vapor dispels concerns about solubilities and the inclusion of solvents in the final crystals, but achieving an ultrathin thickness for common organic semiconductors is beyond its power. On the basis of our recently invented microspacing in-air sublimation (MAS), the distance between the source and growth position is set to approximate the mean free path of the vaporized molecules. Such a configuration generates a genetic relationship between the morphology of the source materials and that of the grown crystals. By refining the deposition of the source materials using ultrasonic spray, we can obtain ultrathin single crystals with a uniform distribution. We exemplify the strategy through MAS growth of ultrathin DNTT and pentacene single crystals down to five and three molecular monolayers, respectively. Field effect transistors fabricated on the ultrathin crystals exhibited average charge carrier mobilities of 6.08 cm 2 V −1 s −1 for DNTT and 2.39 cm 2 V −1 s −1 for pentacene, and low threshold voltages (∼83% of the devices within 5 V).

show abstract

“…[18][19][20] Another is that the capacitance of the dielectric layer should be augmented, either by minimizing the thickness or using high-k dielectrics. 21,22 Up to now, only one work reported OLET operating below 10 V. 23 Low voltage operating devices provide ideal platform to explore the potential of charge injection/blocking layers in further enhancing the electrical and optical performances of OLETs. However, incorporation of them are lacking among those very few OLET devices operating at relatively low voltages.…”

mentioning

confidence: 99%

“…27,28 A thin layer of polystyrene was spin coated to passivate the surface. 21 Subsequently, C10-DNTT was deposited, followed by the deposition of MoO3/Ag source/drain electrodes. 29 We obtained an average saturation hole mobility of 4.3 cm 2 V -1 s -1 , with low threshold voltage and high current on-off ratio (see supporting information).…”

mentioning

confidence: 99%

Low voltage operating organic light emitting transistors with efficient charge blocking layer

Bachelet

Chabot

Ablat

et al. 2021

Organic Electronics

Self Cite

View full text Add to dashboard Cite

Charge injection/blocking layers play important roles in the performances of organic electronic devices.Their incorporation into organic light emitting transistors has been limitted, due to generally high operating voltages (above 60 V) of these devices. In this work, two hole blocking molecules are integrated into tris-(8hydroxyquinoline) aluminum (Alq3) based light emitting transistors under operating voltage as low as 5 V. The effects of hole blocking and electron injection are decoupled through the differences in the energy levels.Significantly improved optical performance is achieved with the molecule of suitable energy level for electron injection. Surprisingly, a decreased performance is observed in the case of another hole blocking molecule evidencing that charge injection overweighs charge blocking in this device architecture.

show abstract

Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate

Abstract: Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate. Flexible and Printed Electronics, 2(4), [045004].

Cited by 10 publications

References 28 publications

Solution Coating of Small Molecule/Polymer Blends Enabling Ultralow Voltage and High‐Mobility Organic Transistors

Solution Coating of Small Molecule/Polymer Blends Enabling Ultralow Voltage and High‐Mobility Organic Transistors

Microspacing In-Air Sublimation Growth of Ultrathin Organic Single Crystals

Low voltage operating organic light emitting transistors with efficient charge blocking layer

Contact Info

Product

Resources

About