Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment

Prasad, Chowdam Venkata; Labed, Madani; Shaikh, Mohammad Tauquir Alam Shamim; Min, Ji Young; Nguyen, Tan Hoang Vu; Song, Wonjin; Park, J.; Kim, Kyong Jae; Kim, Sangmo; Kyoung, Sinsu; Sengouga, Nouredine; Rim, You Seung

doi:10.1016/j.mtadv.2023.100402

Materials Today Advances

2023

DOI: 10.1016/j.mtadv.2023.100402

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Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment

Chowdam Venkata Prasad

Madani Labed

Mohammad Tauquir Alam Shamim Shaikh

et al.

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Cited by 2 publications

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Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction

Labed,

Alotaibi,

Min

et al. 2023

Applied Physics Letters

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A NiO/β-Ga2O3 heterojunction was fabricated by sputtering a highly p-doped NiO layer onto β-Ga2O3. This heterojunction showed a low leakage current and a high turn-on voltage (Von) compared to a Ni/β-Ga2O3 Schottky barrier diode. The extracted Von from the NiO/β-Ga2O3 heterojunction's forward current–voltage characteristics was ∼1.64 V, which was lower than the extracted built-in potential voltage (Vbi) obtained from the capacitance–voltage curve. To explain this difference, deep level transient spectroscopy and Laplace-deep level transient spectroscopy were employed to study majority and minority traps in β-Ga2O3 films. A minority trap was detected near the surface of β-Ga2O3 under a reverse bias of −1 V but was not observed at −4 V, indicating its dependence on hole injection density. Using Silvaco TCAD, the hole diffusion length from P+-NiO to β-Ga2O3 was determined to be 0.15 μm in equilibrium, which is increased with increasing forward voltage. This finding explained why the trap level was not detected at a large reverse bias. Moreover, hole diffusion from NiO into β-Ga2O3 significantly affected the β-Ga2O3 surface band bending and impacted transport mechanisms. It was noted that the energy difference between the conduction band minimum (CBM) of β-Ga2O3 and the valence band maximum (VBM) of NiO was reduced to 1.60 eV, which closely matched the extracted Von value. This supported the dominance of direct band-to-band tunneling of electrons from the CBM of β-Ga2O3 to the VBM of NiO under forward bias voltage.

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Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction

Labed,

Alotaibi,

Min

et al. 2023

Applied Physics Letters

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Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions

Jia,

Traoré,

Morita

et al. 2024

Applied Physics Letters

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Defects in p-type oxide/β-Ga2O3 heterojunction diodes were investigated using p-type Cu2O as a case study. Diodes with polycrystalline and epitaxial Cu2O films were analyzed using deep-level transient spectroscopy. For both diodes, two electron bulk defects were detected, including a minority defect at 0.23 eV below EC within Cu2O and a majority defect at 0.53 eV below EC within β-Ga2O3. Furthermore, a high-density interface state of 4.5 × 1012 cm−2/eV was observed in the polycrystalline Cu2O/β-Ga2O3 diode. The presence of a high density of interface states helped reduce the turn-on voltage owing to the interface recombination current. However, it also enabled electron carriers to tunnel through the interface to β-Ga2O3, followed by variable range hopping through the bulk defect in the β-Ga2O3 layer, ultimately causing undesirable premature breakdown. The results of this study underscore the critical role of optimizing the crystal structure during p-type oxide growth for desired defect characteristics, particularly concerning interface states, in β-Ga2O3 bipolar devices for different applications, offering insights for high-performance power rectifier development.

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Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment

Cited by 2 publications

References 94 publications

Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction

Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/β-Ga2O3 heterojunction

Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions

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