2005
DOI: 10.1080/00150190500315913
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Device Fabrication and Optimisation for Josephson Broadband Spectroscopy of Ferroelectric Thin Films

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Cited by 2 publications
(6 citation statements)
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“…Our analytical solution may provide us with a method of theoretically determining the value of the dielectric constant of the substrate if we use that as a fit parameter between experimental and theoretical graphs. In an earlier work, we have determined R of STO thin films using a Josephson junction based technique called Josephson Broadband Spectroscopy [16,17].…”
Section: Summary Of Resultsmentioning
confidence: 99%
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“…Our analytical solution may provide us with a method of theoretically determining the value of the dielectric constant of the substrate if we use that as a fit parameter between experimental and theoretical graphs. In an earlier work, we have determined R of STO thin films using a Josephson junction based technique called Josephson Broadband Spectroscopy [16,17].…”
Section: Summary Of Resultsmentioning
confidence: 99%
“…Figure 5(a) shows the v dc -φ curve in the case when a normal state resistance asymmetry ρ = 0.2 is considered. Figure 5(b) shows the v dc -φ curve in the case when a current [6] (bold black dots) and theoretical simulations from equation (17) for the φ = 0 case. The continuous line is the simulated curve for no asymmetry considered, the dotted line is for the case when current asymmetry is considered and κ = 0.5, the dashed line is for the case when normal state resistance asymmetry is considered and ρ = 0.2 and the dot-dashed line is for the case when both current and resistance asymmetry are considered and κ = 0.5 and ρ = 0. asymmetry κ = 0.5 and resistance asymmetry ρ = 0.2 are considered.…”
Section: Voltage-flux Characteristicsmentioning
confidence: 99%
“…Our analytical solution may provide us with a method of theoretically determining the value of the dielectric constant of the substrate if we use that as a fit parameter between experimental and theoretical graphs. In an earlier work, we have determined ǫ R of STO thin films using a Josephson junction based technique called Josephson Broadband Spectroscopy [16,17].…”
Section: Summary Of Resultsmentioning
confidence: 99%
“…Eqn. (17) can also be used to simulate the voltage-flux v dc −φ characteristics of a SQUID. We have again used Lee et al's SQUID parameter values to simulate v dc − φ curves for various cases viz.…”
Section: Voltage-flux Characteristicsmentioning
confidence: 99%
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