Device for measuring doping impurities of Groups III and V in high-purity silicon by long-wavelength spectroscopy

Болдырев, К. Н.; Boldyrev, N.Yu.; Kirillin, R. V.

doi:10.3103/s1062873813130042

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Study Of Ir Spectra Under Laser Irradiation1

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2022

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“…Our study shows that exposure to UV irradiation makes it possible to change the states of compensated phosphorus centers and make them optically active. A similar situation was observed for silicon samples doped by phosphorus and boron upon irradiation with light [29][30][31][32]. In this case, pairs of electrons and holes are generated, which also fill unpopulated donor and acceptor levels [29,30].…”

Section: Study Of Ir Spectra Under Laser Irradiationsupporting

confidence: 68%

UV Light Irradiation Effects in P-Doped Diamonds: Total Content Determination of Phosphorus Donors

et al. 2022

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Upon the UV light irradiation of single-crystal diamonds doped with phosphorus, several effects have been observed. The integral intensity of phosphorus lines in FTIR absorption spectra under UV radiation was increased. A saturation effect depending on the power of the laser radiation was demonstrated. Narrowing of the phosphorus lines, as well as the redistribution of the intensities in their doublets caused by the Jahn–Teller distortion of the donor ground state, was observed. It was found that these effects are associated with the decompensation of the phosphorus donors. An easy, fast, sensitive, and nondestructive, fully optical method for the determination of the total phosphorus donor’s concentration in semiconducting diamonds, as well as its compensation ratio, was proposed.

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