Device for monitoring the radiation temperature in coal mines

Ashcheulov, A. A.; Gutsul, I. V.; Maevski, V. S.

doi:10.1364/jot.67.000281

Cited by 16 publications

(18 citation statements)

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“…where X = (2D c − κ/S 2 ) 2 and Y = (2D a − κ/S 2 ) 2 . M * s can be excluded with equations (6) and (7) and we find cos 2 . The values of θ j obtained with this expression with the coercive field data, θ (B) j , are displayed in table 1.…”

Section: Analysis Of the Experimental Resultsmentioning

confidence: 76%

“…A rapid saturation of M(B) can be seen already above B ∼ 2-3 T. The hysteresis loops show decreasing values of the coercivity and the remanence when T is increased. In figure 4 is shown the saturation magnetization M One can see that all of them display the same tendency of enhancement below ∼100 K. In addition, a large difference is observed between the values of M (1) s < M (2) s and M (3) s and the anisotropy of B (j ) c (T ), B (1) c (T ) > B (2) c (T ) > B (3) c (T ) is inverted with respect to that of M coercivity field exists up to 300 K. It is worth mentioning that a weak temperature dependence of the saturation magnetization (as in the bottom panel of figure 4 at T > 100 K) persists in our samples at least up to 460 K, which is the highest temperature attainable in our magnetometer.…”

Section: Resultsmentioning

confidence: 86%

“…Interest in the II-V group semiconductor cadmium antimonide, CdSb, having the energy gap E g ∼ 0.56 eV and an orthorhombic crystal structure, is connected to its strongly anisotropic transport properties [1] attractive for designing devices as anisotropic thermoelectric sensors [2]. Unintentionally doped (briefly undoped) CdSb is a p-type semiconductor with non-degenerate charge carriers and activated conductivity [1,3].…”

Section: Introductionmentioning

confidence: 99%

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The influence of Ni-rich nanoclusters on the anisotropic magnetic properties of CdSb doped with Ni

Laiho

Lashkul

Лисунов

et al. 2006

Semicond. Sci. Technol.

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The magnetic properties of oriented CdSb single crystals doped with 2 at% of Ni are investigated. From measurements of magnetic irreversibility defined by deviation of the zero-field-cooled (ZFC) susceptibility from the field-cooled (FC) susceptibility, the value of the mean anisotropy field B K ∼ 4 kG is obtained. The ZFC susceptibility displays a broad maximum at a blocking temperature, T b , depending on B according to the law [T b (B)/T b (0)] 1/2 = 1 − B/B K with T b (0) ∼ 100 K. The field dependence of the magnetization exhibits saturation above ∼20-30 kG with values of M s different for B along the [1 0 0], [0 1 0] and [0 0 1] axes. The temperature dependence of M s is weak, increasing slightly upon cooling the sample below ∼100 K. The temperature dependence of the coercive field, B c (T), is weak above T b but is enhanced strongly with decreasing temperature below T b. The anisotropy of B c is inverted with respect to the anisotropy of M s. Such behaviour can be attributed to spheroidal Ni-rich Ni 1−x Sb x nanoparticles with a high aspect ratio, broad size distribution and distribution of the orientation of the major axis around a preferred direction. The relation B c B K and the anisotropies of M s and B c are consistent with reversal of the magnetization by the curling mode, whereas the T b (B) dependence is typical of the coherent rotation mode. This difference is connected to the proximity of the average transversal cluster radius to a critical value for transition between the two magnetization reversal modes within a wide crossover interval, due to broad distribution of the cluster sizes.

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Section: Analysis Of the Experimental Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

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The influence of Ni-rich nanoclusters on the anisotropic magnetic properties of CdSb doped with Ni

Laiho

Lashkul

Лисунов

et al. 2006

Semicond. Sci. Technol.

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show abstract

“…8,9 CdSb is an interesting material for thermoelectric sensor applications. [10][11][12] With respect to the well understood tetrahedrally bonded III-V and II-VI systems, II-V semiconductors pose some peculiarity into their bonding properties. First of all it is not clear why the reduced electron concentration (3.5 valence electrons per atom as opposed to 4) still affords semiconductor properties.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and chemical bonding of the electron-poor II-V semiconductors ZnSb and ZnAs

2011

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The binary compounds ZnSb and ZnAs with the CdSb structure are semiconductors (II-V), although the average electron concentration (3.5 per atom) is lower than that of the tetrahedrally bonded III-V and II-VI archetype systems (4 per atom). We report a detailed electronic structure and chemical bonding analysis for ZnSb and ZnAs based on first principles calculations. ZnSb and ZnAs are compared to the zinc blende type semiconductors GaSb, ZnTe, GaAs, and ZnSe, as well as the more ionic, hypothetical, II-V systems MgSb and MgAs. We establish a clearly covalent bonding scenario for ZnSb and ZnAs where multicenter bonded structural entities (rhomboid rings Zn 2 Sb 2 and Zn 2 As 2 ) are connected to each other by classical two-center, twoelectron bonds. This bonding scenario is only compatible with a weak ionicity in II-V semiconductor systems and appears to be strongly coupled to the stability of the CdSb structure type. It is argued that a chemical bonding scenario with mixed multicenter and two-center bonding resembles that of boron and boron rich compounds, and is typical of electron poor spbonded semiconductors with average valence electron concentrations below 4 per atom.2

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“…For example such robots could help locate hazardous chemical leaks [2], function as self propelled inspection devices [3], and search for victims in disaster sites [4,5,6]. Limbless robots that use their bodies to move appear better suited to navigate complex terrains than traditional wheeled [7,8,9,10] and legged [11,12,13,14,15,16,17] robots which are often impeded by the size or shape of their appendages which can result in entrapment or failure.…”

Section: Introductionmentioning

confidence: 99%

Biophysically inspired development of a sand-swimming robot

Maladen

Ding

Umbanhowar

et al. 2010

Robotics: Science and Systems VI

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Abstract-Previous study of a sand-swimming lizard, the sandfish, Scincus scincus, revealed that the animal swims within granular media at speeds up to 0.4 body-lengths/cycle using body undulation (approximately a single period sinusoidal traveling wave) without limb use [1]. Inspired by this biological experiment and challenged by the absence of robotic devices with comparable subterranean locomotor abilities, we developed a numerical simulation of a robot swimming in a granular medium (modeled using a multi-particle discrete element method simulation) to guide the design of a physical sand-swimming device built with off-the-shelf servo motors. Both in simulation and experiment the robot swims limblessly subsurface and, like the animal, increases its speed by increasing its oscillation frequency. It was able to achieve speeds of up to 0.3 body-lengths/cycle. The performance of the robot measured in terms of its wave efficiency, the ratio of its forward speed to wave speed, was 0.34±0.02, within 8 % of the simulation prediction. Our work provides a validated simulation tool and a functional initial design for the development of robots that can move within yielding terrestrial substrates.

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Device for monitoring the radiation temperature in coal mines

Cited by 16 publications

References 0 publications

The influence of Ni-rich nanoclusters on the anisotropic magnetic properties of CdSb doped with Ni

The influence of Ni-rich nanoclusters on the anisotropic magnetic properties of CdSb doped with Ni

Electronic structure and chemical bonding of the electron-poor II-V semiconductors ZnSb and ZnAs

Biophysically inspired development of a sand-swimming robot

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