Device grade hydrogenated polymorphous silicon deposited at high rates

Soro, Yrebegnan Moussa; Абрамов, А.; Gueunier‐Farret, Marie‐Estelle; Johnson, Erik; Longeaud, Christophe; Cabarrocas, Pere Roca i; Kleider, Jean‐Paul

doi:10.1016/j.jnoncrysol.2007.10.047

Cited by 20 publications

(17 citation statements)

References 14 publications

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“…Contrary to pc-Si:H, pm-Si:H films can be made thick enough to be used as an absorber layer of thin film solar cells because the microstructure of pm-Si:H does not depend on the thickness of the film or on the nature of the substrate, as its deposition mechanism mainly relies on the silicon nanocrystals synthesized in the plasma, so the nanocrystals distribute to all over the film thickness. Moreover, such deposition conditions coincide with those which result in a higher deposition rate compared to a-Si:H [8]. Through spectroscopic ellipsometry, Rutherford Backscattering and ERDA measurements, it has been shown that pm-Si:H films are denser than a-Si:H films, in spite of their high hydrogen content, in the range of 15−20% [7].…”

Section: Introductionsupporting

confidence: 57%

“…Through spectroscopic ellipsometry, Rutherford Backscattering and ERDA measurements, it has been shown that pm-Si:H films are denser than a-Si:H films, in spite of their high hydrogen content, in the range of 15−20% [7]. The peculiar structure of pm-Si:H results in a low defect density (of the order of 10 14 cm −3 eV −1 at Fermi level as measured by SCLC and modulated photocurrent) and higher resistance to light-soaking than aSi:H [8][9][10]. In particular improved hole transport appears to be a key point for the application of this material in solar cells [11].…”

Section: Introductionmentioning

confidence: 99%

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Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

et al. 2012

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We report on light-induced electrical and macroscopic changes in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells. To explain the particular light-soaking behavior of such cells -namely an increase of the open circuit voltage (Voc) and a rapid drop of the short circuit current density (Jsc) -we correlate these effects to changes in hydrogen incorporation and structural properties in the layers of the cells. Numerous techniques such as current-voltage characteristics, infrared spectroscopy, hydrogen exodiffusion, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and spectroscopic ellipsometry are used to study the light-induced changes from microscopic to macroscopic scales (up to tens of microns). Such comprehensive use of complementary techniques lead us to suggest that light-soaking produces the diffusion of molecular hydrogen, hydrogen accumulation at p-layer/substrate interface and localized delamination of the interface. Based on these results we propose that light-induced degradation of PIN solar cells has to be addressed from not only as a material issue, but also a device point of view. In particular we bring experimental evidence that localized delamination at the interface between the p-layer and SnO2 substrate by light-induced hydrogen motion causes the rapid drop of Jsc.

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Section: Introductionsupporting

confidence: 57%

Section: Introductionmentioning

confidence: 99%

Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

et al. 2012

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“…On the other hand, pm-Si:H films were obtained by the dissociation of a 10% silane in hydrogen mixture at 2-4 Torr under an RF power of 90 mW/cm 2 . A deposition rate of 9Å/s could be achieved for the pm-Si:H films [21]. We experimented with two different deposition temperatures (175…”

Section: Methodsmentioning

confidence: 99%

Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

2016

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We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC) on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P-and N-doped μc-SiOx:H layers and a MgF2 ARC.

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“…Polymorphous silicon is a heterogeneous material processed at higher pressure and higher power in a regime close to the powder regime, where nanoparticles formed in the plasma are deposited onto the substrate and embedded in an amorphous matrix [23e27]. It has been shown that pm-Si:H has a lower defect density than a-Si:H, and a better stability, while the bandgap energy is slightly larger [15].…”

Section: Introductionmentioning

confidence: 99%

New silicon thin-film technology associated with original DC–DC converter: An economic alternative way to improve photovoltaic systems efficiencies

Dadouche

Béthoux

Kleider

2011

Energy

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Device grade hydrogenated polymorphous silicon deposited at high rates

Cited by 20 publications

References 14 publications

Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells

Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

New silicon thin-film technology associated with original DC–DC converter: An economic alternative way to improve photovoltaic systems efficiencies

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