Device level model for trapping effects in GaN and GaAs devices for broadband data communication

Rafael-Valdivia, Guillermo; Su, Zhiguo; Urquizo, Anthony; Mendoza, Thalia

doi:10.1109/apmc.2015.7413228

Cited by 2 publications

(2 citation statements)

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“…To accurately predict the large signal performance of PAs, several large signal models have been reported in previous works. [6][7][8][9][10][11][12][13] Some proposed works based on I-V characteristic equations describe the static relationships of junction voltages and currents, [6][7][8][9] while others give out good consideration of circuit-level nonlinear parameters such us IP3, P1dB, or IM3. [10][11][12][13] These methods give circuit designer accurate simulation results, but limited insight of how the intrinsic elements change with increasing power level at large signal mode and its influence on nonlinear effects.…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, a large signal model with the capacity to describe large signal intrinsic elements of the transistor quantitatively is critical to investigate and minimize the nonlinear distortion of PAs. To accurately predict the large signal performance of PAs, several large signal models have been reported in previous works . Some proposed works based on I‐V characteristic equations describe the static relationships of junction voltages and currents, while others give out good consideration of circuit‐level nonlinear parameters such us IP3, P1dB, or IM3 .…”

Section: Introductionmentioning

confidence: 99%

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Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel‐Poon model

Shibata

et al. 2018

Int J Numerical Modelling

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A large signal analysis method based on Gummel-Poon model is proposed to predict nonlinear behavior of InGaP/GaAs HBT. A 2 × 20 μm 2 transistor is fabricated with InGaP/GaAs HBT technology. The large signal transconductance G m , conductance G be , and capacitance C BE , C BC are calculated based on the proposed method and measured using a RF testing probe. The calculated and measured results show good consistency up to nonlinear power level. The proposed method is applied to analyze variations of nonlinear large signal intrinsic elements of this transistor with increasing power under different bias conditions, in order to raise benefit of nonlinear consideration for power amplifiers.

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