Device modeling

Engl, W.L.; Dirks, H.K.; Meinerzhagen, B.

doi:10.1109/proc.1983.12524

Cited by 123 publications

(24 citation statements)

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“…This approach converges asymptotically linear with the simulation time similar to the convergence behavior of the Gummel loops in the drift-diffusion based TCAD device simulators [1,15]. Thus the proposed approach is much faster than a Monte Carlo algorithm which gains numerical accuracy proportional to the square root of the CPU time [16].…”

mentioning

confidence: 58%

“…This approach converges linearly with simulation time similar to the Gummel loop in the classical drift-diffusion based TCAD device simulators [1,15], and thus much faster than an MC algorithm with its square root dependence [16]. In addition, it yields a truly stationary solution.…”

Section: Convergence Enhancement Methods For the Iteration Loopmentioning

confidence: 86%

“…[1,15]), the carrier density is defined on the direct grid and the current density on the adjoint grid. Similarly the unknowns g m of the projected BTE (55) are defined either on the direct or adjoint grid depending on the parity of m. The "densities" (m even) are defined on the direct grid and the "fluxes" (m odd) on the adjoint.…”

Section: Discretization Of the Projected Btementioning

confidence: 99%

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On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

2009

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In this paper numerical aspects of deterministic multisubband device simulations are presented for strained double gate PMOSFETs including magnetotransport. The simulations are based on a self-consistent solution of the multisubband Boltzmann transport equation (BTE), 6 × 6 k · p Schrödinger equation (SE) and Poisson equation (PE). For accurate and efficient calculation of the subband structure, an efficient discretization of the 2D k-space combined with a monotonic cubic spline interpolation is employed. The multisubband BTE is solved with a deterministic method based on a Fourier expansion of the distribution function. The Fourier series is found to converge rapidly for nanoscale double gate PMOSFETs. A convergence enhancement method for the Gummel type SE-PE-BTE loop by solving the BTE-PE simultaneously is proposed.

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mentioning

confidence: 58%

Section: Convergence Enhancement Methods For the Iteration Loopmentioning

confidence: 86%

Section: Discretization Of the Projected Btementioning

confidence: 99%

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On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

2009

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“…For numerical reasons, it is better to deal with the potential ψ and the quasi‐Fermi potentials for electrons and holes, ϕ n and ϕ p , in steady‐state simulations, as variables of the same order of magnitude rather than ψ, n and p . Thus, the electron and hole current densities can be expressed as

J_{e} = prefix- q μ_{e} n \frac{\partial ϕ_{n}}{\partial r}, and J_{h} = prefix- q μ_{h} p \frac{\partial ϕ_{p}}{\partial r}

n = n_{i} e^{\frac{ψ - ϕ_{n}}{V_{t}}}, and p = n_{i} e^{\frac{ϕ_{p} - ψ}{V_{t}}}

…”

Section: The Structure and The Main Equationsmentioning

confidence: 99%

Numerical simulation and a parametric study of inorganic nanowire solar cells

Ali

Haleem

Allam

et al. 2016

Int J Numerical Modelling

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Summary Radial junction nanorods (nanowires) are mainly used to improve the carrier collection efficiency and accordingly the conversion efficiency of solar cells. In this work, a numerical simulator has been produced for a cylindrical p–n junction solar cell based on a finite difference discretization of semiconductor, Poisson's, drift–diffusion transport and charge continuity equations. It can be applied to estimate the photogenerated current density, open circuit voltage, fill factor and conversion efficiency of inorganic radial p–n and p–i–n junction nanowires. Additionally, the simulator can produce the spatial distribution of the carriers' densities, electric field and energy bands of the nanowires. The simulator results show a good matching with previously published ones. Finally, the simulator is used in a parametric study to optimize the geometry and the junction depth of cylindrical silicon solar cells. Copyright © 2016 John Wiley & Sons, Ltd.

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“…5.9) according to the load characteristic R = (Z T + R T ) with the switching time less than 1 ns. 180 Chapter 5 Isothermal Instability in Compound Semiconductor Devices Spectral and spatial light emission distributions provided further insight into the nature of current at breakdown. The major components of avalanche-injection mechanism can be demonstrated from a comparison of drain and gate current characteristics.…”

Section: Experimental Setup For Current Instability Study In Mesfetsmentioning

confidence: 99%

Physical Limitations of Semiconductor Devices

Ващенко¹,

Sinkevitch²

2008

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Device modeling

Cited by 123 publications

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On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

Numerical simulation and a parametric study of inorganic nanowire solar cells

Physical Limitations of Semiconductor Devices

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