Device-partition method using equivalent circuit model in two-dimensional device simulation

Abstract

SUMMARYIn order to accomplish two-dimensional device simulation with a large number of nodes, in this paper we propose the device-partition method (DPM) to resolve the problem that the memory size of the simulation environment is insufficient. The idea of DPM is that the device can be divided into several parts and a matrix solver only solves one part at a time. DPM uses the iteration method to simulate the device. By continuous iteration, an accurate solution can be obtained. Hence, we use DPM to demonstrate the simulations of the MOSFET and the CMOS inverter. The simulation results of DPM and the coupled method (CM) are nearly approximate and correspond with the theory. Hence, DPM is a suitable method to develop a powerful simulation environment.

An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation

“…In the past, some literatures have proposed the 2-D equivalent circuit models of Poisson's equation and the continuity equations [2][3][4]. In this paper, we will need to model the 2-D Poisson's equation with the fixed charge in oxide layer.…”

“…The vertical integration is the natural method and the horizontal integration is the superposition method. In the device modelling, we will use the equivalent circuit approach to formulate Poisson's and the continuity equations into a subcircuit format [2][3][4]. The fixed charge modelling will be embedded in the equivalent-circuit modelling for Poisson's equation.…”