Device performance and density of trap states of organic and inorganic field-effect transistors

Häusermann, Roger; Willa, Kristin; Blülle, Balthasar; Morf, T.; Facchetti, Antonio; Chen, Zhihua; Lee, Jiyoul; Batlogg, B.

doi:10.1016/j.orgel.2015.11.011

Cited by 28 publications

(22 citation statements)

References 106 publications

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“…A variation by three orders of magnitude of trap DOS is caused by the degree of crystalline order. The trap DOS in organic semiconductors compares well with the one of inorganic semiconductors with the same morphology . Temperature‐dependent space charge limited current density versus applied voltage is another useful method to extract trap density .…”

Section: Charge Transportmentioning

confidence: 99%

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V−1 s−1. However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

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Section: Charge Transportmentioning

confidence: 99%

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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“…In general, the DOS influences directly on device operation and performance. However, the DOS distribution can be controlled by many factors such as temperature, exposing the organic semiconductor layer to gas and ions as well as the illumination and dipole layer [43,[62][63][64][65][66][67][68][69]. Actually, the Gaussian DOS distribution can be estimated by the following relation [22][23][24][25]69]: (15) where N t is the number of states per unit volume, E is the energy and indicates the energy scale of the density of states (DOS) which also implies the degree of energetic disordered (also called the width of the DOS).…”

Section: Study Of the Effects Of The Illumination And Dipole Layer Onmentioning

confidence: 99%

Illumination and dipole layer effects on the density of state distribution in n-type organic thin film phototransistors based on naphthalene bis-benzimidazole: Experiment and modeling

Boukhili

Tozlu

Mahdouani

et al. 2017

Microelectronic Engineering

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“…Figure 5 summarizes the energydependent trap DOS for the four different semiconductors, where symbols correspond to the trap DOS determined experimentally from noise measurements (Fig. 4) and the black lines represent the trap distribution derived from the transfer characteristics via numerical modeling 37,39,40 (see details in Supplementary Fig. 9 and Supplementary Note 6).…”

Section: Resultsmentioning

confidence: 99%

Remarkably low flicker noise in solution-processed organic single crystal transistors

et al. 2018

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Low-frequency noise generated by a fluctuation of current is a key issue for integrating electronic elements into a high-density circuit. Investigation of the noise in organic field-effect transistors is now sharing the spotlight with development of printed integrated circuits. The recent improvement of field-effect mobility (up to 15 cm 2 V −1 s −1 ) has allowed for organic integrated circuits with a relatively high-speed operation (~50 kHz). Therefore, an in-depth understanding of the noise feature will be indispensable to further improve the circuit stability and durability. Here we performed noise measurements in solution-processed organic single crystal transistors, and discovered that a low trap density-of-states due to the absence of structural disorder in combination with coherent band-like transport gives rise to an unprecedentedly low flicker noise. The excellent noise property in organic single crystals will allow their potential to be fully exploited for high-speed communication and sensing applications.

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Device performance and density of trap states of organic and inorganic field-effect transistors

Cited by 28 publications

References 106 publications

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Illumination and dipole layer effects on the density of state distribution in n-type organic thin film phototransistors based on naphthalene bis-benzimidazole: Experiment and modeling

Remarkably low flicker noise in solution-processed organic single crystal transistors

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