Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

Rolseth, Erlend; Blech, Andreas; Fischer, I. A.; Hashad, Youssef; Koerner, Roman; Kostecki, Konrad; Kruglov, A. I.; Srinivasan, Vijay; Weiser, Mathias; Wendav, Torsten; Busch, Kurt; Schulze, J.

doi:10.23919/mipro.2017.7973391

Cited by 4 publications

(2 citation statements)

References 37 publications

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“…We first notice that J P is almost identical for the three samples featuring different TDDs, witnessing a high reproducibility of the fabrication process. In contrast, J A shows a clear dependence on the TDD [25,26]. Indeed, we observe a super-linear relationship J A TDD  [27], with (V R ) values always greater than 1 (see Fig.…”

mentioning

confidence: 69%

Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)

Tetzner

Fischer

Skibitzki

et al. 2021

Applied Physics Letters

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The present work investigates the role of threading dislocation densities (TDD) in the low density regime on the vertical transport in Si 0.06 Ge 0.94 heterostructures integrated on Si(001). The use of unintentionally doped Si 0.06 Ge 0.94 layers enables the study of the impact of grown-in threading dislocations (TD) without interaction with processing-induced defects originating e.g. from dopant implantation. The studied heterolayers, while equal in composition, the degree of strain relaxation, and the thickness, feature three different values for the TDD: 3×10 6 , 9×10 6 and 2×10 7 cm -2 . Current-voltage measurements reveal that leakage currents do not scale linearly with TDD. The temperature dependence of the leakage currents suggests a strong contribution of field-enhanced carrier generation to the current transport, with the trap-assisted tunneling via TD-induced defect states identified as the dominant transport mechanism at room temperature. At lower temperature and at high electric fields, direct band-to-band tunneling without direct interaction with defect levels becomes the dominating type of transport. Leakage currents related to emission from mid-gap traps by the Shockley-Read-Hall (SRH) generation is observed at higher temperatures (>100 °C). Here, we see a reduced contribution coming from SRH in our material, featuring the minimal TDD (3×10 6 cm -2 ), which we attribute to a reduction in point defect clusters trapped in the TD strain fields.

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confidence: 69%

Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)

Tetzner

Fischer

Skibitzki

et al. 2021

Applied Physics Letters

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“…8,9 This breakthrough enables development of devices such as high ON-current MOSFETs, [10][11][12][13][14] Schottky-barrier FETs (SBFETs), or tunnel FETs (TFETs). [15][16][17][18] However, the device performance does not depend only on the material properties of the channel, but also on the electrostatic control of the gate. Hence, the fabrication of high-k/GeSn gate stacks with a good interfacial quality is key to obtaining high performance GeSn-based devices.…”

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confidence: 99%

Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers

Haffner

Mahjoub

Labau

et al. 2019

Applied Physics Letters

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The impact of different interfacial layers (ILs) on the electrical performances of Au/Ti/HfO 2 /Ge 0.9 Sn 0.1 metal oxide semiconductor (MOS) capacitors is studied. Parallel angle resolved x-ray photoelectron spectroscopy measurements show that germanium diffuses into the HfO 2 layer when no IL is used. This results in an increase in the tin content at the interface and a high interface state density. We demonstrate that the use of an IL prevents germanium and HfO 2 intermixing and improves the electrical performance of MOS capacitors. Several ILs are studied such as alumina (Al 2 O 3 ) and plasma oxidized GeSn (GeSnO x ) prior to HfO 2 deposition. C-V measurements correlated with simulations made by a customized analytical model indicate an interface state density of 5 Â 10 11 eV À1 cm À2 for the HfO 2 /GeSnO x /Ge 0.9 Sn 0.1 gate stack. This result is promising for the integration of high mobility GeSn channels in CMOS devices.

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The Effect of Frequency Dispersion to the RF Performance of Dual Source Tunneling FETs

Kuang

Yongcheng

Zhang

et al. 2018

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

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Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

Cited by 4 publications

References 37 publications

Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)

Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)

Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers

The Effect of Frequency Dispersion to the RF Performance of Dual Source Tunneling FETs

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