Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective

Wager, John F.; Kuhn, Kelin J.

doi:10.1080/10408436.2016.1223013

Cited by 31 publications

(20 citation statements)

References 70 publications

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“…Fourth, barrier-lowering considerations may be applicable to Schottky emission over a barrier [18,19], phonon-assisted tunneling or Fowler-Nordheim tunneling through a barrier [20], or Frenkel-Poole emission from a trap [18,19]. that is often used in the assessment of the electronic properties of a semiconductor or an insulator surface or interface [21,22]. The limit S = 1 corresponds to an ideal case in which the surface state density is zero, whereas S = 0 implies that the interface state density is infinitely large.…”

Section: Dielectric Constant Trends and Implicationsmentioning

confidence: 99%

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Solid state dielectric screening versus band gap trends and implications

2016

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High-frequency (optical) and low-frequency (static) dielectric constant versus band gap trends, as well as index of refraction versus band gap trends are plotted for 107 inorganic semiconductors and insulators. These plots are describable via power-law fitting. Dielectric screening trends that emerge from this analysis have important optical and electronic implications. For example, barrier lowering during Schottky emission, phonon-assisted or Fowler-Nordheim tunneling, or Frenkel-Poole emission from a trap is found to be significantly more pronounced with increasing band gap due to a reduction in the optical dielectric constant with increasing band gap. The decrease in the interface state density with increasing band gap is another optical dielectric constant trend. The tendency for a material with a wider band gap to be more difficult to dope is attributed to an increase in the ionization energy of the donor or acceptor dopant, which in turn, depends on the optical dielectric constant and the effective mass. Since the effective mass for holes is almost always larger than that for electrons, p-type doping is more challenging than n-type doping in a wide band gap material. Finally, the polar optical phonon-limited mobility depends critically upon the reciprocal difference of the optical and the static dielectric constant. Consequently, electron and hole mobility tend to decrease with increasing band gap in a polar material.

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Section: Dielectric Constant Trends and Implicationsmentioning

confidence: 99%

“…In contrast, a very wide band gap insulator is nearly ideal, with S approaching 1. Induced gap state theory asserts that the minimum surface state density for a semiconductor or insulator is equal to [22] 1 1…”

Section: Dielectric Constant Trends and Implicationsmentioning

confidence: 99%

Solid state dielectric screening versus band gap trends and implications

2016

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“…To verify the reduction of defect state, we analyzed the intrinsic back-channel surface and interface defect density at the Al 2 O 3 / SnO based on induced gap state (IGS) theory. [20] The intrinsic surface state density (D SS ) can be estimated by…”

Section: Resultsmentioning

confidence: 99%

Switching Mechanism behind the Device Operation Mode in SnO‐TFT

Lee

Zhang

Huang

et al. 2020

Adv Elect Materials

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performances, including high TFT mobility (≈10 cm 2 V −1 s −1), low operation voltage (≈3 V), and low off-current characteristics as well as excellent mechanical flexibility and low-cost processability. [4] Therefore, n-channel a-IGZO-TFT is successfully commercialized in the market and widely used as a TFT backplane in the state-of-art active-matrix flat panel display such as large-sized high-resolution organic light-emitting diode and low-power consumption active-matrix liquid crystal display. [5-7] The next major challenge faced in oxide semiconductor technology is to develop complementary metal-oxide semiconductor (CMOS) inverter circuits for future ubiquitous device applications. So far, several CMOS inverters based on oxide-TFTs have been demonstrated with n-type oxide a-IGZO and p-type oxides such as SnO, Cu 2 O, and organic semiconductors. [8-10] However, different fabrication process involved in n-and p-type materials results in complicated circuit design and integration, leading to the production of the impractical circuit. [11]

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“…Localized states in the TiO 2 moiety around −0.3 eV are absent from the isolated TiO 2 layer, and are regarded as gap states created by Ag-O chemical bonds. Although evanescent metal states caused by a surface termination can generate delocalized gap sates, 24 such gap states play a minor role in photoexcitation discussed below. The further details of the electronic structure are given in Supplementary Sec.…”

Section: Simulated Systemsmentioning

confidence: 99%

Electron transfer governed by light–matter interaction at metal–semiconductor interface

Iida

Noda

2020

npj Comput Mater

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The photoexcitation of heterostructures consisting of metallic nanoclusters and a semiconductor has been extensively investigated in relation to interests in photocatalysis and optical devices. The optoelectronic functions of the heterostructures originate from localized surface plasmon resonance, which can induce electron and resonance energy transfers. While it is well known that photoinduced electronic interaction between a metallic nanocluster and a semiconductor is responsible for the resonance energy transfer, the electron transfer associated with the photoinduced electronic interaction has not been discussed. In this paper, we elucidate the photoexcitation dynamics of a silver nanocluster/TiO 2 heterostructure using an original first-principles computational approach that explicitly deals with light-matter interactions. It is shown that the photoinduced silver-TiO 2 electronic interaction causes excited electrons to be directly transferred from the silver nanocluster to the TiO 2 layer without passing through the conduction band of the silver nanocluster.

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Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective

Cited by 31 publications

References 70 publications

Solid state dielectric screening versus band gap trends and implications

Solid state dielectric screening versus band gap trends and implications

Switching Mechanism behind the Device Operation Mode in SnO‐TFT

Electron transfer governed by light–matter interaction at metal–semiconductor interface

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