1995
DOI: 10.1016/0022-0248(95)00394-0
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Device quality of in situ plasma cleaning for silicon molecular beam epitaxy

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Cited by 5 publications
(5 citation statements)
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“…[9,10]), the removal of chemical SiO 2 cannot be caused by hydrogen radicals, which was formerly assumed. We conclude that the presence of lowenergy ions in the plasma environment initiates the oxide layer removal.…”
Section: Discussionmentioning
confidence: 98%
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“…[9,10]), the removal of chemical SiO 2 cannot be caused by hydrogen radicals, which was formerly assumed. We conclude that the presence of lowenergy ions in the plasma environment initiates the oxide layer removal.…”
Section: Discussionmentioning
confidence: 98%
“…[8][9][10]). Using the parameter set stated above with a RCA pre-cleaned substrate, the oxide layer can be removed to sub-ML-coverage at temperatures of less than 225 C. The described plasma process [10] etches pure silicon as well as SiO 2 , the etching rate for Si even exceeds the etching rate for SiO 2 by one order of magnitude.…”
Section: Hydrogen DC Plasmamentioning
confidence: 99%
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“…Not only the absolute amount of contaminants is important, but also their distribution on the surface. While a low homogeneously distributed atomic carbon contamination may be epitaxially embedded into a silicon layer a cluster or particle often leads to the formation of dislocations or slip lines inside the crystal [22]. Segregation of dopands and island formation also cause defects in epitaxial layers [23].…”
Section: Distribution Of Contaminants On the Surfacementioning
confidence: 99%
“…Last but not least, hydrogen related cleaning processes in combination with plasma applications have to be mentioned. Several groups [22] [33] [144] [145] [146] [147] have reported oxygen-and carbon-free silicon surfaces after plasma treatment. According to the results presented above [32] these results can only be understood if in addition to chemical reactions physical impact of particles or radiation is present.…”
mentioning
confidence: 99%