Device Quality Polycrystalline Gallium Arsenide on Germanium/Molybdenum Substrates

Abstract

This paper describes the growth of polycrystalline films of gallium arsenide on molyt~denum substrates with an intermediate layer of germanium. The gallium arsenide layer is grown by the reaction of trimethylgallium and arsine in a cold-wall reactor system. Germanium layers are iormed by vacuum evaporation, as well as by the pyrolysis of germane gas. Techniques are described for minimizing massive autodoping effects which are commonly observed in the heteroepitaxy of these semiconductors. Doping concentrations in the range of (7-13) • 101~/cm ~ are obtained for the gallium arsenide film. Schottky diodes, fabricated in this material, exhibit avalanche breakdown in the range of 30-35V.

The Use of S 2Cl2 for Doping Poly ‐ GaAs Films Grown by the Organometallic Process

“…The growth of these films was carried out in a conventional rf heated cold wall reactor of the type described earlier (2). An all stainless steel, Monel, and Teflon system was used to deliver the reactants to the reaction chamber.…”