2024
DOI: 10.1149/2162-8777/ad9400
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Device Reliability of Negative Capacitance Source Pocket Double Gate TFETs: A Study on Temperature and Noise Effects

K. Murali Chandra Babu,
Ekta Goel

Abstract: This study investigates the reliability of a negative capacitance source pocket double gate tunnel field-effect transistor (NC-SP-DGTFET) by examining the effects of temperature and various noise components on its performance. The research focuses on key DC parameters, including the transfer characteristics, subthreshold swing, and the ION/IOFF ratio, evaluated across a temperature range from 250 to 450 K. Additionally, the study explores the radio-frequency performance of the device by assessing how temperatu… Show more

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