Device simulation for smart integrated systems (DESSIS)

Baccarani, G.; Rudan, Massimo; Lorenzini, Marilinda; Fichtner, W.; Litsios, J.; Schenk, Alexander; Staa, P. van; Kaeser, L.; Kampmann, Alexandru; Marmiroli, A.; Sala, C.; Ravanelli, E.

doi:10.1109/icecs.1996.584471

Cited by 3 publications

(2 citation statements)

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“…DESSIS was developed by merging HFIELDS from the University of Bologna, 21 SIMUL from ETH Zurich, 22 BONSIM from Bosch, and in collaboration with ST Microelectronics. 23 In 1993, Integrated Systems Engineering (ISE) was founded and assumed responsibility for the simulator. ISE merged with Synopsys in 2004, and DESSIS became the basis of SDevice.…”

Section: Introductionmentioning

confidence: 99%

A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs

Tunga¹,

Li²,

Miller³

et al. 2022

Preprint

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Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model as it is implemented in the device simulator Sentaurus from Synopsys. The electron transport and heat flow equations of the respective solvers are described in detail. The differences in the description of electron flux and the discretization methods are highlighted. Next, the transport models are applied to the same simulated device structure using identical meshes, boundary conditions, and material parameters. Static simulations show the numerical convergence of Fermi kinetics to be consistently quadratic or faster, whereas the hydrodynamic model is often sub-quadratic. Further comparisons of large signal transient simulations reveal the hydrodynamic model produces certain anomalous electron ensemble behaviors within the transistor structure. The fundamentally different electron dynamics produced by the two models suggest an underlying cause for their different numerical convergence characteristics.

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Section: Introductionmentioning

confidence: 99%

A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs

Tunga¹,

Li²,

Miller³

et al. 2022

Preprint

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“…In this way, it became possible to couple the advantage of standard methods, applicable to solving the hydrodynamic equations on realistic structures, with a finer analysis involving the use of the distribution function over specific energy ranges. Such an approach proved very efficient and has been used in the analysis and design of complicated structures [7,8].…”

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confidence: 99%

Hydrodynamic simulation of semiconductor devices

Rudan

Lorenzini

Brunetti

1998

Theory of Transport Properties of Semiconductor Nanostructures

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INTRODUCTIONRecently the hydrodynamic model has become popular in the field of analysis and simulation of semiconductor devices*. The model has the merit of providing, along with the concentration and current density of the carriers, also their average energy and average energy flux. At the same time, its equations basically retain the same structure of the simpler drift-diffusion model; because of this, it has been possible to incorporate the hydrodynamic equations into existing deviceanalysis codes, thus exploiting a number of robust solution schemes already available there.The hydrodynamic model is derived by applying the moment technique to the Boltzmann transport equation (BTE) and truncating the series of moments at a suitable order. This yields a number of partial differential equations in the r, t space, specifically, the continuity equations for the carrier number, momentum, average energy and average energy flux. In this procedure, due to the integration over the wave vector space and to the series truncation, some of the information originally carried by the distribution function is lost. However, the information provided by the continuity equations indicated above is in most cases sufficient to describe the electrical behaviour of realistic semiconductor devices.It is worth noting that the term hydrodynamic model is not always given exactly the same meaning in the existing literature. What is meant here by this term is a model derived through the following steps: * Part of this work was carried out within ADEQUAT (JESSI BTl I, ESPRIT 8002) and DESSIS (ESPRIT 6075). E. Schöll (ed.), Theory of Transport Properties of Semiconductor Nanostructures

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