2021 IEEE International Conference on Telecommunications and Photonics (ICTP) 2021
DOI: 10.1109/ictp53732.2021.9744237
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Device simulation of a highly efficient CZTS solar cell with CuS as hole transport layer

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Cited by 4 publications
(4 citation statements)
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“…In recent years, various organisations have researched the Cu 2 ZnSnS 4 (CZTS) absorber material with quaternary kesterite structure in an effort to determine whether it would be the most promising replacement for CIGS [7][8][9]. This is because CZTS technology uses raw materials at a significantly lower cost than CIGS technology, which is more financially viable [10].…”
Section: Introductionmentioning
confidence: 99%
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“…In recent years, various organisations have researched the Cu 2 ZnSnS 4 (CZTS) absorber material with quaternary kesterite structure in an effort to determine whether it would be the most promising replacement for CIGS [7][8][9]. This is because CZTS technology uses raw materials at a significantly lower cost than CIGS technology, which is more financially viable [10].…”
Section: Introductionmentioning
confidence: 99%
“…Hole transport layer helps to reduce the recombination at back side and improve the hole transportation towards the back contact [10]. CuI is a semiconductor with a broad bandgap (3.1 eV) and three crystalline phases: a, b, and g. The p-type semiconductor CuI is found in the g-phase of these crystalline phases.…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, a considerable back surface recombination loss is another challenge in order to achieve the best PV efficiency. It has been inspected that incorporating an hole transport layer (HTL) amid the CZTS layer and the back metal contact can minimize surface recombination loss at the interface, thus enhance the conversion efficiency remarkably 53–56 . In this regard, we suggest to use the p + Sb 2 S 3 semiconducting material as an HTL with the CZTS absorber to minimize the carrier recombination loss at the interface.…”
Section: Introductionmentioning
confidence: 99%
“…It has been inspected that incorporating an hole transport layer (HTL) amid the CZTS layer and the back metal contact can minimize surface recombination loss at the interface, thus enhance the conversion efficiency remarkably. [53][54][55][56] In this regard, we suggest to use the p + Sb 2 S 3 semiconducting material as an HTL with the CZTS absorber to minimize the carrier recombination loss at the interface. The Sb 2 S 3 material has important optoelectronic characteristics like suitable band gap (∼1.7 eV), superior absorption coefficient (∼10 5 cm −1 ), earth-abundant in constituents, less toxicity, and low-cost fabrication process.…”
Section: Introductionmentioning
confidence: 99%