Device Simulation of Nanopillar-based n-CdS/p-CdTe Solar Cell with Enhanced and Efficient Carrier Collection

Sharma, Dinesh Kumar; N, Shyam Krishnan; Ramasesha, S.

doi:10.1007/s12633-022-02150-3

Cited by 5 publications

(2 citation statements)

References 38 publications

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“…The pyroelectric effect and the photovoltaic effect couple together, to develop a new mechanism called pyro-phototronic effect [1][2][3][4][5][6][7][8][9], which has an excellent role in enhancing device photo sensing performance. It is now well-known phenomenon which contributes specifically for enhanced UV sensing purpose and basically observed in materials with noncentro symmetric crystal structure like ZnO, CdS, GaN and some organic materials like crystalline rubrene [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27]. The phenomenon has been first observed by Z. Wang et al [28] in perovskite ZnO nanowires heterojunction-based photodetector.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on the pyro-phototronic behaviour in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device

Rabha,

Das,

Borah

et al. 2024

Preprint

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In the present study, effect of annealing in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device is observed for the behavioural change in its pyro-phototronic and corresponding photovoltaic effect. Under UV (365nm) illumination condition, as prepared device shows maximum enhancement and increment factor of 31.16% and 186% at \(0.5V\) compared to the devices annealed at temperature \(\ge 50^\circ C\). However, the coupling between pyro-phototronic and photovoltaic effect remains effective only for the device annealed up to \(100^\circ C\). On further elevating the annealing temperature, the pyro-phototronic effect diminishes while photovoltaic effect remains. The device treated at \(150^\circ C\) shows enhancement in open circuit voltage (\({V}_{oc}\)) value of \(\pm 841 mV\) with large value of fill factor (FF) of \(27\%\) and power conversion efficiency (PCE) of \(9.63\%\) and \(6.36\%\) for upward and downward poling respectively.

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Section: Introductionmentioning

confidence: 99%

Annealing effect on the pyro-phototronic behaviour in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device

Rabha,

Das,

Borah

et al. 2024

Preprint

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“…The unique morphology of nanowall structures can enhance light absorption, making them excellent candidates for optoelectronic applications. Nanowall structures can potentially improve charge carrier transport due to their high-quality crystalline nature, which can help in reducing charge recombination and enhancing the efficiency of devices by efficient charge carrier transport in the device [39][40][41]. The dimensions of the nanowalls (like thickness, height, etc) can be tuned during the fabrication process, allowing control over their optical and electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on cds nanowalls grown by chemical bath deposition on glass substrate

et al. 2023

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This paper focuses on the structural, morphological, and optical properties of the CdS thin films on the glass substrate with the effect of annealing. Chemical bath deposition (CBD) is a basic technique that is used in this work to form CdS thin films. The films' (d) thickness is calculated to be 400 nm. According to the XRD results, the particle sizes for the as-deposited and the annealed CdS film are 15.15 nm and 16.56 nm, respectively. The SEM images of formed nanowalls in the films were compared for both the as-deposited and the annealed CdS structure. It was attained with the Raman spectroscopy analysis that as-deposited and annealed films include the LO phonon modes of the CdS. Moreover, FT-IR analysis was performed to determine the hydroxide ion (OH-) behavior depending on the annealing effect. The optical band gap energy of the annealed CdS nanowalls reduced from 2.31 eV to 2.19 eV, according to the UV measurements. Additionally, the Hall Effect is used to assess the conductivity and resistivity of as-deposited and annealed films. This work demonstrated that CdS films readily form nanowalls at 85 °C.

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Effect of Annealing on the Pyro-Phototronic Behaviour in Al/nanostructured PS-ML: p+-Si Schottky Photovoltaic Device

Rabha,

Das,

Borah

et al. 2024

Silicon

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Device Simulation of Nanopillar-based n-CdS/p-CdTe Solar Cell with Enhanced and Efficient Carrier Collection

Cited by 5 publications

References 38 publications

Annealing effect on the pyro-phototronic behaviour in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device

Annealing effect on the pyro-phototronic behaviour in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device

Annealing effect on cds nanowalls grown by chemical bath deposition on glass substrate

Effect of Annealing on the Pyro-Phototronic Behaviour in Al/nanostructured PS-ML: p+-Si Schottky Photovoltaic Device

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