Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics
G Purnachandra Rao,
Trupti Ranjan Lenka,
Valeria Vadalà
et al.
Abstract:III-nitrides, such as gallium nitride (GaN) and aluminium nitride (AlN), possess a wide bandgap, a high breakdown voltage, and a high thermal conductivity, making them an attractive choice for high frequency and high-power applications. A further benefit of III-nitride-based HEMTs is their high current density, low noise figure, and higher electron mobility, which enable efficient radio-frequency signal amplification. In this research work, the polarization induced graded buffer technique and improved lattice … Show more
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