Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Slassi, Amine; Medondjio, Linda‐Sheila; Padovani, Andrea; Tavanti, Francesco; He, Xu; Clima, Sergiu; Garbin, Daniele; Kaczer, B.; Larcher, Luca; Ordejón, Pablo; Calzolari, Arrigo

doi:10.1002/aelm.202201224

Cited by 9 publications

(2 citation statements)

References 62 publications

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“…Based on a BEC increasing upon trap charging, an OTS-gauge factor was defined to assess the material's ability to undergo a threshold switch for theoretical screening purposes [98]. Another illustration of the impact of the polaron relaxation model in amorphous Ge 50 Se 50 was given by Slassi et al [142] whose results stressed the dramatic changes in the mobility gap undertaken by the amorphous matrix.…”

Section: Polaron Relaxationmentioning

confidence: 99%

Chalcogenide Ovonic Threshold Switching Selector

Zhao,

Clima,

Garbin

et al. 2024

Nano-Micro Lett.

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Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane, commonly referred to as three-dimensional phase change memory, stands out as one of the most promising candidates. The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch (OTS). The OTS device, which employs chalcogenide film, has thereby gathered increased attention in recent years. In this paper, we begin by providing a brief introduction to the discovery process of the OTS phenomenon. Subsequently, we summarize the key electrical parameters of OTS devices and delve into recent explorations of OTS materials, which are categorized as Se-based, Te-based, and S-based material systems. Furthermore, we discuss various models for the OTS switching mechanism, including field-induced nucleation model, as well as several carrier injection models. Additionally, we review the progress and innovations in OTS mechanism research. Finally, we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications, such as self-selecting memory and neuromorphic computing.

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Section: Polaron Relaxationmentioning

confidence: 99%

Chalcogenide Ovonic Threshold Switching Selector

Zhao,

Clima,

Garbin

et al. 2024

Nano-Micro Lett.

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“…5a and Fig. 54,55 . In order to nd the origin of the trap states, we projected them onto real space by using the analytical tools for electron wave-functions in the VASPKIT code 56 , as shown in Figs.…”

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confidence: 96%

The Role of Arsenic in the Operation of Electrical Threshold Switches

Gotoh

et al. 2023

Preprint

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Arsenic is one of the most frequently used elements for doping conventional silicon-based semiconductors and particularly in emerging phase-change-memory (PCM) chips, yet the detailed functional mechanism as well as its experimental demonstration is still lacking in the latter in spite of its wide application. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are essential units for suppressing sneak currents in 3D PCM arrays, with various As concentrations. We discovered that incorporation of 20 at. % As brings a more than 100 ℃ increase in crystallization temperature, remarkably improving the switching repeatability and prolonging the device lifetime. These benefits arise from strengthened As-S bonds and sluggish atomic migration after As incorporation, as demonstrated by molecular-dynamics simulations. As a result, the addition of As reduces the leakage current by more than an order of magnitude and significantly suppresses the operational voltage drift, ultimately enabling a backend-of-the-line (BEOL)-compatible OTS selector with > 12 MA/cm2 on-current, >104 on/off ratio, ~ 10 ns speed, and a lifetime approaching 1010 cycles after 450 ℃ annealing. These performance enhancements can be explained by an As-induced increase of the band gap and of trap states, as determined by experimental photothermal deflection spectroscopy. Mechanistically, this is due to abundant defect states associated with Ge-Ge chains introduced by As-Ge and As-S bonds. These findings allow the use of precise control of the As concentration in OTS materials for improved-performance high-density 3D PCM applications.

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Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

Kamble,

Shin,

Park

et al. 2023

Solar RRL

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Germanium selenide (GeSe), a new 2D semiconductor material, is an attractive material due to its excellent optoelectronic properties, which hold tremendous promise in a wide range of applications, including thin‐film solar cells (TFSCs) and photoelectrochemical (PEC) water splitting. Several attempts have been made to date in theoretical studies, high‐quality GeSe material synthesis, evaluating absorber properties, and developing efficient TFSCs and PEC devices. Using existing device topologies for chalcogenide materials, TFSCs with 5.2% efficiency and a PEC device with 3.17% solar‐to‐hydrogen efficiency have been recently developed. To enable its potential in high performances of TFSCs and PEC devices for future large‐scale applications, further improvement in materials quality, device design, and development is required. In this regard, this review provides a comprehensive overview of current advances made in GeSe material development and applications in TFSCs and PEC devices. First, the fundamental properties of GeSe material, theoretical studies, as well as in‐depth synthesis methods, are outlined. Then, key developments in GeSe‐based TFSCs and PEC devices are discussed with an emphasis on device designs. Finally, the most prominent impediments to a fundamental understanding of materials are highlighted, and perspectives on future research directions for improving material quality and device efficiency are provided.

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Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Cited by 9 publications

References 62 publications

Chalcogenide Ovonic Threshold Switching Selector

Chalcogenide Ovonic Threshold Switching Selector

The Role of Arsenic in the Operation of Electrical Threshold Switches

Germanium Selenide: A Critical Review on Recent Advances in Material Development for Photovoltaic and Photoelectrochemical Water‐Splitting Applications

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