“…In the presence of hydrofluoric acid (HF), this active mask etches Si in a highly anisotropic fashion. MACE can successfully transfer a variety of metal nanostructure patterns into the silicon substrate and is often used to synthesize VA-SiNW arrays using metal holey meshes perforated with circular holes. ,,,,, MACE does not require expensive lab equipment, is cost-effective, relatively fast, and can be used with different catalyst composition and geometry, and substrate materials. ,,, Additionally, MACE is especially effective at preparing high-aspect-ratio Si nanostructures with smooth walls, and can be CMOS-compatible using appropriate etching masks. − …”