1991
DOI: 10.1103/physrevlett.67.2917
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Cited by 110 publications
(290 citation statements)
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“…The enhancement of m * g * in the 1-valley 2DES of GaAs/AlAs systems is found to be strongly dependent on the spin polarization [5], in strong contrast to the Si-MOSFET case. Our calculations [3] show that the physics of the 1-valley system is dominated by the presence of a transition to a fully polarized state which makes g * increase rapidly with r s as the transition density is approached. The 2-valley system shows no such transition to the spinpolarized state and is insensitive to the spin polarization.…”
mentioning
confidence: 93%
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“…The enhancement of m * g * in the 1-valley 2DES of GaAs/AlAs systems is found to be strongly dependent on the spin polarization [5], in strong contrast to the Si-MOSFET case. Our calculations [3] show that the physics of the 1-valley system is dominated by the presence of a transition to a fully polarized state which makes g * increase rapidly with r s as the transition density is approached. The 2-valley system shows no such transition to the spinpolarized state and is insensitive to the spin polarization.…”
mentioning
confidence: 93%
“…In a recent study of the effective mass m * and the effective Landé-g factor of the 2DES, the Coulomb coupling between the electrons of the two valleys was shown to have a dramatic effect at low densities when the coupling becomes large [3]. In effect, the elementary excitations of the two fluids in the two valleys interact to form coupled modes, giving rise to new effects.…”
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confidence: 99%
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“…Dharmawardana in a series of papers [21] has calculated the effective mass, Landé g * -factor and spin susceptibility for Q2D electron systems within the classical-map hypernetted chain (CHNC) approximation. He found that the thickness effect on the spin-phase transition provides a clear picture of the changes in the spin susceptibility enhancement leading to a strong increase in the g * -factor, while the effective mass is increased from the reduction of the Coulomb potential in thick layers.…”
Section: Introductionmentioning
confidence: 99%