Diagnostics of degradation processes induced by pulsed electric signals at the aluminum-silicon interface

Deflected State of Semiconductor Near-Contact Region at Electrodegradation of Metallization Track on Its Surface

“…A substantially nonhydrostatic stressed state of metal is typical for them. Under these conditions, the role of deviator component of stress tensor increases (Skvortsov et al, 2006). Because of this, relaxation of tangential stresses becomes considerably easier.…”

“…To estimate approximately ν and ᴡ, let us suppose that (Equation 5) and (Equation 6) (here q 0 is the linear mass of conditional charge) and ascribe the basic part of energy of real wave field to a conditional wave of profile compression. This wave is symmetric about the х-axis; its duration is ~δ0D-1 (Skvortsov et al, 2006). Because of assumption of equality between the kinetic and potential energies in such wave, the total specific energy in it is determined from the following formula (Equation 7).…”

“…On a number of occasions technologists try to apply the methods of correcting mechanical stresses by additional oxidizing the reverse side of silicon plates (Lee et al, 2017;Nguyen et al, 2018;Yao et al, 2019). Nevertheless, in some cases partial destruction of joint integrity (Makara It is known (Skvortsov et al, 2006;Skvortsov et al, 2016;Moser et al, 2019) that passage of an electric pulse through metallization track may result in processes of (i) contact melting (as the eutectic melting temperature T eu achieves 850 K at the Al-Si interface) and (ii) aluminum film melting (as the aluminum melting temperature T Al achieves 934 K). It was established by the authors in their earlier works (Skvortsov et al, 2006;Skvortsov et al, 2016) that development of processes of contact melting and electro-degradation for the Al-Si systems can appear when heating thin-film systems by an electric pulse of energy up to 250 J and interval duration of 50…1000 s.…”