Ionized physical vapour deposition (IPVD) is of current interest to the semiconductor industry for the deposition of thin metal films as diffusion barriers and seed layers in high aspect ratio features. One of the aims of IPVD is to collimate depositing particle fluxes by ionizing a significant fraction of the incident metal vapour and applying an electric potential bias to the substrate. A system consisting of a dc-powered, 15 cm diameter copper sputter source and a RF induction plasma powered by a single-turn, 36 cm diameter, loop antenna internal to the vacuum chamber has been examined. Measurements made with a biased quartz crystal microbalance in an argon background of 10-90 mTorr demonstrate that, at low magnetron sputtering levels of 100 W, ionized metal flux fractions (IMFFs) as high as 90% can be observed. However, further measurements of the IMFFs and plasma density indicate rarefaction of the background argon gas as the metal flux to the plasma increases. Results are presented from an experimental investigation of methods to reduce the gas rarefaction. These include the modulation of the metal flux on the timescale of the process gas residence time and increasing the target-to-substrate height.