2019
DOI: 10.1049/mnl.2018.5604
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Diameter optimisation for highest DoB of CNT‐FETs

Abstract: Carbon nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nanoscaled transistors. This work aims at analysing a trade-off between device performance and device size of CNT-based transistor. Acoustic and optical phonon (OP) scattering along with the elastic scattering lead to the non-ballistic performances of those transistors. The main focus of this work is mainly on finding an optimum diameter to obtain the highest degree of ballisticity (DoB) fro… Show more

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