Diamond Based Field‐Effect Transistors of Zr Gate with SiN_x Dielectric Layers

Abstract

Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface

“…In Fig.6a) of Ref. [14], FWHM of Pd 3d 5/2 XPS peaks appear almost same for the edge and on the Pd pad. However, the sizes of islands and gaps of O-terminated diamond surface among islands at the edge were not identified and reported.…”

“…In Fig.6a) of Ref. [14], FWHM of Pd 3d 5/2 XPS peak for thin Pd layer appears almost 1.6 times larger than that for the thick Pd pad.…”

“…Another concern for the annealed sample is that FWHM of C 1s XPS peak is almost 1.6 times larger than that for the as-deposited sample (c.f. Fig.6b) of [14]). These must be considered to reach to a sound and correct XPS determination of barrier height.…”

“…Recently, XPS was used to directly determine the barrier height of ohmic Pd/H-terminated diamond (001) [14]. In this study, thin layer (thickness of 3 nm) of…”

“…In this sense, the special scheme described in Sec.2 is satisfied. C1s and Pd 3d 5/2 XPS peaks were measured on an Pd-deposited and VUV/ozone processed sample for the thin Pd layer and for a thick Pd pad used for specific contact resistance measurement [14]. It was not described whether the thick Pd pad was in electrical contact with the ground potential of the sample holder of the XPS apparatus.…”