Diamond deposition by hollow cathode arc discharge

Stiegler, J.O.; Laufer, Stefan; Mainz, B.; Weber, Thomas; Schaarschmidt, G.

doi:10.1016/0925-9635(94)90127-9

Cited by 4 publications

(1 citation statement)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Direct current hollow cathode arcs are widely used in thin film technology [1][2][3]. The hollow cathode (HC) plasma delivers high degrees of ionization [4] (up to 50%) at relatively low pressures (< 10 −2 mbar); it also delivers a stable plasma.…”

Section: Introductionmentioning

confidence: 99%

Development of a UHV compatible hollow cathode arc source for the deposition of hard nitride coatings

Isfort

Buck

2000

Plasma Sources Sci. Technol.

View full text Add to dashboard Cite

An ultrahigh vacuum (UHV) compatible hollow cathode arc source has been developed for the deposition of very pure nitride films (especially c-BN films). The crucial compounds of the plasma source have been numerically investigated to find parameters for optimal functioning. Heat conduction as well as radiation problems have been considered in both discharge electrodes, temperature distributions for different cathode materials have been calculated which show a strong dependence of the maximum temperature on the work function of the cathode. In order to deposit pure films a rather small cathode work function should be used. The source has been characterized experimentally with Langmuir probes and mass spectrometry with special regard to the nitrogen ion fluxes which are important for nitride film deposition-He addition to the working gas seemed to be beneficial in increasing the nitrogen ion fluxes. TiN x films could be deposited in the first experiments with a standard parameter set.

show abstract

Section: Introductionmentioning

confidence: 99%

Development of a UHV compatible hollow cathode arc source for the deposition of hard nitride coatings

Isfort

Buck

2000

Plasma Sources Sci. Technol.

View full text Add to dashboard Cite

show abstract

Diamond Layers on Silicon: Feasibility of Interface Assessment by Infrared and Raman Spectroscopies

Werninghaus

Friedrich

Zahn

1996

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

Using diamond films which were grown by plasma‐assisted chemical vapour deposition on Si(100) and Si(111) substrates as samples, Fourier‐transform infrared and Raman spectroscopies were applied with particular emphasis on the investigation of interface properties such as silicon carbide (SiC) formation and strain distribution. While SiC interlayers can be detected with nanometre sensitivity by infrared spectroscopy it lacks the high spatial resolution obtainable in a micro‐Raman experiment. It will thus be demonstrated that the presence of a thin SiC interfacial layer can also be observed in the Raman spectra even despite the low scattering efficiency of SiC. Furthermore, Raman spectra taken in the conventional plane‐view geometry are employed to evaluate the lateral homogeneity of the diamond deposition. Cross‐sectional Raman spectra, on the other hand, provide information e.g. on the strain distribution across the interface. The combination of infrared results with those from conventional plane‐view as well as cross‐sectional Raman spectra consequently give a detailed insight in the nature of diamond/Si interfaces.

show abstract