2014
DOI: 10.1179/1743294414y.0000000250
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Diamond deposition on WC–Co substrate with amorphous SiC interlayer

Abstract: An amorphous SiC (a-SiC) thin film is deposited on the WC-Co insert from dimethyldiethoxysilane/ hydrogen gas mixture using hot filament chemical vapour deposition (HFCVD) technique. Energy dispersive X-ray spectroscopy, scanning electron microscope, Fourier transform infrared spectroscopy, X-ray diffraction spectroscopy and transmission electron microscope are used to characterise the as fabricated a-SiC thin film. Subsequently, the a-SiC film is used as an intermediate film, and an adherent top layer of CVD … Show more

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Cited by 17 publications
(3 citation statements)
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“…The cobalt on the surface was then dissolved with acid (H 2 SO 4 : H 2 O 2 = 1:10) during 60s [23]. Because the substrate surface contains cobalt, which could catalyse at high temperature the undesirable growth of graphite and of other forms of carbon phases unrelated to diamond [24], resulting in poor adhesion and grain quality, the etching step is mandatory. Finally, the pretreated samples were seeded with nano-diamond powder suspension ultrasonically for 30 min in order to optimize diamond nucleation [25].…”
Section: Methodsmentioning
confidence: 99%
“…The cobalt on the surface was then dissolved with acid (H 2 SO 4 : H 2 O 2 = 1:10) during 60s [23]. Because the substrate surface contains cobalt, which could catalyse at high temperature the undesirable growth of graphite and of other forms of carbon phases unrelated to diamond [24], resulting in poor adhesion and grain quality, the etching step is mandatory. Finally, the pretreated samples were seeded with nano-diamond powder suspension ultrasonically for 30 min in order to optimize diamond nucleation [25].…”
Section: Methodsmentioning
confidence: 99%
“…Another viable strategy is the deposition of intermediate layers, acting as diffusion barriers for Co and minimizing effects from the thermal expansion difference. Among several possible interlayers cited in the literature, silicon carbide (SiC) is pointed as one of the best options for such application 7,[10][11][12][13][14][15][16][17][18][19][20] . SiC is extensively used in abrasive tools, ceramics, insulation, metallurgical applications, refractories, and wear resistant materials, and this is due to its superior properties, including wide bandgap, low density, low thermal expansion, excellent thermal shock/oxidation/chemical resistance, high hardness, and high thermal conductivity 18,21 .…”
Section: Introductionmentioning
confidence: 99%
“…And the influence of texture on the adhesion strength and cutting performance of the boron doped diamond (BDD) film is analysed by an indentation test and cutting test, respectively. deposition process, all the WC-Co substrate was pretreated by Murakami's reagent and Caro's acid etching procedure to coarse the surface and remove the surface Co element [14,15]. The mixture of acetone and trimethyl borate is introduced into the vacuum reaction chamber by part of H 2 bubbling method to provide boron source and a carbon source [16,17].…”
Section: Introductionmentioning
confidence: 99%