Diamond film deposition on WC–Co and steel substrates with a CrN interlayer for tribological applications

Chandran, Maneesh; Hoffman, A.

doi:10.1088/0022-3727/49/21/213002

Cited by 44 publications

(16 citation statements)

References 163 publications

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“…On the other hand, diamond and silicon (Si) are two traditional materials with high hardness atomic crystals. They are also commonly used in metal processing, coating, and protection [7,8]. These materials, owing to their small-scale surface roughness (1-1,000 nm), inevitably suffer from micro-scale motions, i.e., the fretting process, when they form interfaces under normal service [9,10].…”

Section: Introductionmentioning

confidence: 99%

Multiscale analysis of friction behavior at fretting interfaces

et al. 2020

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Friction behavior at fretting interfaces is of fundamental interest in tribology and is important in material applications. However, friction has contact intervals, which can accurately determine the friction characteristics of a material; however, this has not been thoroughly investigated. Moreover, the fretting process with regard to different interfacial configurations have also not been systematically evaluated. To bridge these research gaps, molecular dynamics (MD) simulations on Al-Al, diamond-diamond, and diamond-silicon fretting interfaces were performed while considering bidirectional forces. This paper also proposes new energy theories, bonding principles, nanoscale friction laws, and wear rate analyses. With these models, semi-quantitative analyses of coefficient of friction (CoF) were made and simulation outcomes were examined. The results show that the differences in the hardness, stiffness modulus, and the material configuration have a considerable influence on the fretting process. This can potentially lead to the force generated during friction contact intervals along with changes in the CoF. The effect of surface separation can be of great significance in predicting the fretting process, selecting the material, and for optimization.

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Section: Introductionmentioning

confidence: 99%

Multiscale analysis of friction behavior at fretting interfaces

et al. 2020

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“…Unfortunately, the actual lifetime is lesser than expected because of the insufficient coating adhesion. Cobalt (Co) binder in the WC-Co substrate deteriorates the coating adhesion by inhibiting diamond nucleation and promoting the formation of graphitic phases at the interface [3,4]. Moreover, the residual stress caused by the mismatched thermal expansion coefficient (TEC), Young's modulus, and hardness, etc.…”

Section: Introductionmentioning

confidence: 99%

Gradient-Modified HfC-SiC Mixed Bi-Interlayers Synthesized under Different TMS Flow Rate Increment for Depositing Diamond Coating onto WC-Co Substrate

Zheng

Gao

et al. 2020

Materials

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To deposit well-adhered diamond coating, gradient-modified hafnium carbide-silicon carbide (HfC-SiC) mixed bi-interlayers were prepared on cemented carbides (WC-Co) by plasma surface metallurgy technique under the different tetramethylsiline (TMS) flow rate increment. The effects of the TMS flow rate increment on the composition, microstructure, adhesion, and hardness of the bi-interlayers were investigated. Then, the well-adhered bi-interlayer was chosen for the deposition of the diamond coating. It was found that the HfC-SiC mixed bi-interlayers consisted of a diffusion-modified HfC-riched inner layer and a SiC-riched outer layer. The TMS flow rate increment played a key role in tailoring the surface morphology, thickness, and interface character of the bi-interlayer. The dense nanocrystalline diamond coating was formed on the optimized bi-interlayer at the increment of 0.20 sccm/2 min. The diamond coating showed excellent adhesion, which was benefited from the cobalt (Co) diffusion inhibition, gradient composition distribution, and mechanical interlocking.

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“…Up to now, many kinds of interlayers have been studied, such as Cr [8], Ti [8], Al [9], Al/W [10], Al/AlN [11], CrN [12][13], etc. These interlayers can serve as diffusion barriers, blocking C inward diffusion and Fe outward diffusion and continuous diamond film can be deposited on stainless steels.…”

Section: Introductionmentioning

confidence: 99%

“…So, the sandblasting was used in the work and it still needs to look for other method to further decrease the stress. Generally, thermal stress is an important component in the stress of diamond films [13]. It is proportional to the temperature difference from deposition temperature to room temperature.…”

Section: Introductionmentioning

confidence: 99%

Low-stress diamond films deposited on stainless steel by a two-step dropped power process in chemical vapor deposition

Xiao

Feng

et al. 2018

Diamond and Related Materials

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A continuous low-stress diamond film has been prepared on stainless steel by a novel two-step dropped power process using a Cr/CrN/CrTiAlN film as an interlayer. After the interlayer was deposited on the stainless steel, isolated diamond particles were firstly prepared under high power of 1800 W for 10 min in CVD, which has low stress, releasing most of thermal stress. Then, the low power of 1500 W was adopted to form continuous diamond films. The stress is obviously lower than that of the continuous diamond film deposited only in the first CVD process, indicating that the two-step dropped power process surely decreases the internal stress of the film. The blocky microstructure on sandblasted stainless steel and the existence of very small amount of pores in the diamond film are also beneficial to releases the stress.

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Diamond film deposition on WC–Co and steel substrates with a CrN interlayer for tribological applications

Cited by 44 publications

References 163 publications

Multiscale analysis of friction behavior at fretting interfaces

Multiscale analysis of friction behavior at fretting interfaces

Gradient-Modified HfC-SiC Mixed Bi-Interlayers Synthesized under Different TMS Flow Rate Increment for Depositing Diamond Coating onto WC-Co Substrate

Low-stress diamond films deposited on stainless steel by a two-step dropped power process in chemical vapor deposition

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