Diamond for Electronics: Materials, Processing and Devices

Araújo, D.; Suzuki, Mariko; Lloret, F.; Alba, G.; Villar, Pilar

doi:10.3390/ma14227081

Cited by 46 publications

(25 citation statements)

References 187 publications

(217 reference statements)

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“…Importantly, it also possesses the best thermal conductivity and an enormous radiation hardness. These properties make diamond devices interesting for high-temperature, high-power, and harsh environments applications [ 3 , 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

et al. 2022

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Silicon oxide atomic layer deposition synthesis development over the last few years has open the route to its use as a dielectric within diamond electronics. Its great band-gap makes it a promising material for the fabrication of diamond–metal–oxide field effects transistor gates. Having a sufficiently high barrier both for holes and electrons is mandatory to work in accumulation and inversion regimes without leakage currents, and no other oxide can fulfil this requisite due to the wide diamond band-gap. In this work, the heterojunction of atomic-layer-deposited silicon oxide and (100)-oriented p-type oxygen-terminated diamond is studied using scanning transmission electron microscopy in its energy loss spectroscopy mode and X-ray photoelectron spectroscopy. The amorphous phase of silicon oxide was successfully synthesized with a homogeneous band-gap of 9.4 eV. The interface between the oxide and diamond consisted mainly of single- and double-carbon-oxygen bonds with a low density of interface states and a straddling band setting with a 2.0 eV valence band-offset and 1.9 eV conduction band-offset.

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Section: Introductionmentioning

confidence: 99%

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

et al. 2022

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“…Due to its ultrawide bandgap and high thermal conductivity [ 1 ], diamond has attracted the attention of the scientific community already at the silicon sunrise [ 2 ]. However, the rarity and high cost of natural stones, as well as the variability of their electronic properties [ 3 ], postponed the implementation of diamond electronics until the beginning of the 21st century when methods for the synthesis of centimeter-sized diamond single crystals and their controlled doping appeared [ 1 , 4 ]. Today, diamond technology is developing rapidly.…”

Section: Introductionmentioning

confidence: 99%

Effect of Titanium and Molybdenum Cover on the Surface Restructuration of Diamond Single Crystal during Annealing

et al. 2023

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Diamond is an important material for electrical and electronic devices. Because the diamond is in contact with the metal in these applications, it becomes necessary to study the metal–diamond interaction and the structure of the interface, in particular, at elevated temperatures. In this work, we study the interaction of the (100) and (111) surfaces of a synthetic diamond single crystal with spattered titanium and molybdenum films. Atomic force microscopy reveals a uniform coating of titanium and the formation of flattened molybdenum nanoparticles. A thin titanium film is completely oxidized upon contact with air and passes from the oxidized state to the carbide state upon annealing in an ultrahigh vacuum at 800 °C. Molybdenum interacts with the (111) diamond surface already at 500 °C, which leads to the carbidization of its nanoparticles and catalytic graphitization of the diamond surface. This process is much slower on the (100) diamond surface; sp2-hybridized carbon is formed on the diamond and the top of molybdenum carbide nanoparticles, only when the annealing temperature is raised to 800 °C. The conductivity of the resulting sample is improved when compared to the Ti-coated diamond substrates and the Mo-coated (111) substrate annealed at 800 °C. The presented results could be useful for the development of graphene-on-diamond electronics.

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“…In particular, diamonds are being evaluated as an ideal next-generation material in semiconductor devices. They are also considered a cutting-edge material suitable for quantum computers and space electronic devices in radiation environments, owing to their high electron and hole mobility and their excellent bandgap energy characteristics [8]. The recent increase in frequency bands with the development of wireless communication technology to 5G and beyond has prompted the need for high-performance power semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Scanning Deposition Method for Large-Area Diamond Film Synthesis Using Multiple Microwave Plasma Sources

et al. 2022

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The demand for synthetic diamonds and research on their use in next-generation semiconductor devices have recently increased. Microwave plasma chemical vapor deposition (MPCVD) is considered one of the most promising techniques for the mass production of large-sized and high-quality single-, micro- and nanocrystalline diamond films. Although the low-pressure resonant cavity MPCVD method can synthesize high-quality diamonds, improvements are needed in terms of the resulting area. In this study, a large-area diamond synthesis method was developed by arranging several point plasma sources capable of processing a small area and scanning a wafer. A unit combination of three plasma sources afforded a diamond film thickness uniformity of ±6.25% at a wafer width of 70 mm with a power of 700 W for each plasma source. Even distribution of the diamond grains in a size range of 0.1–1 μm on the thin-film surface was verified using field-emission scanning electron microscopy. Therefore, the proposed novel diamond synthesis method can be theoretically expanded to achieve large-area films.

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Diamond for Electronics: Materials, Processing and Devices

Cited by 46 publications

References 187 publications

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

Effect of Titanium and Molybdenum Cover on the Surface Restructuration of Diamond Single Crystal during Annealing

Scanning Deposition Method for Large-Area Diamond Film Synthesis Using Multiple Microwave Plasma Sources

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